Title:
A source of supply and a method for concentration selenium ion implantation
Document Type and Number:
Japanese Patent JP6104461
Kind Code:
B2
Abstract:
A novel method for ion implanting isotopically enriched selenium containing source material is provided. The source material is selected and enriched in a specific mass isotope of selenium, whereby the enrichment is above natural abundance levels. The inventive method allows reduced gas consumption and reduced waste. The source material is preferably stored and delivered from a sub-atmospheric storage and delivery device to enhance safety and reliability during the selenium ion implantation process.
Inventors:
Haiderman, Douglas, Sea.
Sinha, Ashwini, Kay.
Brown, Lloyd, A.
Sinha, Ashwini, Kay.
Brown, Lloyd, A.
Application Number:
JP2016512042A
Publication Date:
March 29, 2017
Filing Date:
May 01, 2014
Export Citation:
Assignee:
Praxair Technology Incorporated
International Classes:
H01J27/02; H01J37/08; H01J37/317; H01L21/265
Domestic Patent References:
| JP61244071A | ||||
| JP8288233A | ||||
| JP5225923A | ||||
| JP6295820A |
Foreign References:
| WO2011106750A1 | ||||
| US20110097882 | ||||
| WO2014137872A2 |
Attorney, Agent or Firm:
Asamura patent office
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