Title:
A spin polarization electronic generating element and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP6001319
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To realize a spin polarization electron generating element having a high spin polarization degree and high external quantum efficiency.SOLUTION: There is provided a spin polarization electron generating element in which a substrate is GaP, a buffer layer is AlGaAsP, and a lattice constant of the buffer layer is a value greater than that of GaP, generating compressive strain in a surface direction in the buffer layer, and forming a crystal nucleus having a separated island shape in an early stage of crystal growth of the buffer layer. This allows the buffer layer to be flatly crystal-grown, to allow each layer thickness of strained superlattice layers on the buffer layer to be uniform on the surface to form a flat surface. Compression stress is thereby uniformly applied to a well layer of the strained superlattice layers within the surface to properly separate a heavy positive hole band from a light positive hole band. Accordingly, a high spin polarization degree is improved and excellent crystallinity of the strained superlattice layers is obtained to improve external quantum efficiency of polarization electrons.
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Inventors:
Hidemitsu Kim
Takeda Miwa
Shingo Fuchi
Takeda Miwa
Shingo Fuchi
Application Number:
JP2012108186A
Publication Date:
October 05, 2016
Filing Date:
May 10, 2012
Export Citation:
Assignee:
Japan Science and Technology Agency
International Classes:
H01J1/34; H01J37/073
Domestic Patent References:
| JP7320633A | ||||
| JP2009266809A |
Attorney, Agent or Firm:
Osamu Fujitani