Title:
スパッターリング時の粒子状放出物を少なくするためのスパッターターゲットとそれを製造する方法
Document Type and Number:
Japanese Patent JP5368663
Kind Code:
B2
Abstract:
Methods for reducing inclusion content of sputter targets and targets so produced are disclosed. Inclusions (93) may be reduced by adding a small amount of Si to the molten A1 or molten A1 alloy followed by filtering of the molten metals through a filter medium (175). Targets having substantially no inclusions (93) therein of greater than about 400 mu m are especially useful in the sputtering of large flat panel displays and result, upon sputtering, in a reduction in the amount of macroparticles sputtered onto the substrate.
Inventors:
ウィッカーシャム,チャールズ,イー.,ジュニア
プール,ジョン,イー.
レイボヴィッチ,アレクサンダー
ツー,リン
プール,ジョン,イー.
レイボヴィッチ,アレクサンダー
ツー,リン
Application Number:
JP2001576952A
Publication Date:
December 18, 2013
Filing Date:
April 09, 2001
Export Citation:
Assignee:
トーソー エスエムディー,インク.
International Classes:
B22D11/00; C22B21/06; B22D11/049; B22D11/115; B22D11/119; B22D21/04; B22D27/02; B22D43/00; C22B9/02; C22C21/02; C22C21/12; C23C14/34
Domestic Patent References:
| JP9059768A | ||||
| JP2148724A | ||||
| JP63216933A | ||||
| JP11335826A | ||||
| JP9025564A | ||||
| JP4232263A | ||||
| JP3162530A | ||||
| JP2001214264A | ||||
| JP2001028350A |
Foreign References:
| WO1999027150A1 |
Attorney, Agent or Firm:
新部 興治
狩野 彰
狩野 彰