Title:
A storage cell and memory storage
Document Type and Number:
Japanese Patent JP6272235
Kind Code:
B2
Abstract:
There are provided a storage device and a storage unit capable of improving retention performance of an intermediate resistance value in writing at a low current, and a storage device and a storage unit capable of reducing random telegraph noise. A storage device of one embodiment of the present technology includes a first electrode, a storage layer, and a second electrode in this order, and the storage layer includes: an ion source layer including one or more kinds of chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se), and one or more kinds of transition metal elements selected from Group 4 elements, Group 5 elements, and Group 6 elements of the periodic table; and a resistance change layer including boron (B) and oxygen (O). A storage device of another embodiment of the present technology includes the above-described ion source layer and a resistance change layer including one or more kinds of transaction metal elements selected from Group 4 elements, Group 5 elements, and Group 6 elements of the periodic table, and oxygen (O).
Inventors:
Kazuhiro Oba
Kiyohiro
Kiyohiro
Application Number:
JP2014551000A
Publication Date:
January 31, 2018
Filing Date:
November 06, 2013
Export Citation:
Assignee:
Sony Semiconductor Solutions Corporation
International Classes:
H01L21/8239; H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
| JP2012182172A | ||||
| JP2009218260A | ||||
| JP2012146368A |
Attorney, Agent or Firm:
Patent Business Corporation Tsubasa International Patent Office
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