Title:
構造体及び接合体
Document Type and Number:
Japanese Patent JP7313105
Kind Code:
B2
Abstract:
According to one embodiment, a structure according to the embodiment includes a β type silicon nitride type crystal phase and a Y2Si3O3N4 type crystal phase. In an X-ray diffraction pattern according to a θ-2θ method of the structure, a ratio of a second peak intensity being maximum and appearing at 2θ=31.93±0.1° with respect to a first peak intensity being maximum and appearing at 2θ=27.03±0.1° is 0.005 or more and 0.20 or less.
Inventors:
Yumi Fukuda
Koichi Harada
Kenji Koshizaki
Yasushi Hattori
Yasuhiro Gonohe
Keiko Albesar
Maki Yonezu
Koichi Harada
Kenji Koshizaki
Yasushi Hattori
Yasuhiro Gonohe
Keiko Albesar
Maki Yonezu
Application Number:
JP2019168557A
Publication Date:
July 24, 2023
Filing Date:
September 17, 2019
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
C04B35/587; C04B37/02
Domestic Patent References:
| JP2011195395A | ||||
| JP2002356376A | ||||
| JP6345535A | ||||
| JP9069672A |
Foreign References:
| WO2010002001A1 | ||||
| WO2011111746A1 | ||||
| WO2017014168A1 | ||||
| WO2017014169A1 |
Attorney, Agent or Firm:
Patent Attorney Firm iX