Title:
A substrate for X ray image sensors
Document Type and Number:
Japanese Patent JP6125017
Kind Code:
B2
Abstract:
A thin film transistor substrate (2) includes: an auxiliary capacitor electrode (7); a gate insulating film (8) formed on an insulating substrate (4) to cover the auxiliary capacitor electrode (7); a drain electrode (11) formed on the gate insulating film (8) and an oxide semiconductor layer (9); a planarization film (13) formed on a passivation film (12); a capacitor electrode (14) formed on the planarization film (13); an interlayer insulating film (16) formed on the planarization film (13); and a pixel electrode (17) formed on the interlayer insulating film (16) and electrically connected to the drain electrode (11) via a contact hole (18).
Inventors:
Masaki Fujiwara
Kohei Tanaka
Kohei Tanaka
Application Number:
JP2015530707A
Publication Date:
May 10, 2017
Filing Date:
August 05, 2014
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L27/146; H01L21/336; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/08; H01L27/144; H01L29/786
Domestic Patent References:
| JP2004087604A | ||||
| JP2008177556A | ||||
| JP2004040115A | ||||
| JP2013205140A |
Foreign References:
| US6445003 |
Attorney, Agent or Firm:
Maeda patent office
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