Title:
気泡の形成を回避し、かつ、粗さを制限する条件により共注入工程を行う薄層転写方法
Document Type and Number:
Japanese Patent JP5042837
Kind Code:
B2
Abstract:
A method for producing a semiconductor structure by conducting controlled co-implanting of at least first and second different atomic species into a donor substrate to create an embrittlement zone which defines a thin layer of donor material to be transferred. Implantation energies are selected so that the first and second species are respectively distributed in the donor wafer according to a repartition profile that presents a spreading zone in which each species is mainly distributed at a maximum concentration peak. The implantation doses and energies of the first and second species are selected such that the second species is implanted deeper in the embrittlement zone than the first species spreading zone. The donor substrate is detached at the embrittlement zone to transfer the thin layer to the support substrate while minimizing blister formation in and surface roughness of the transferred layer. Preferably, the implantation dose of the first species is between about 40 to 60 percent of all implantation doses. This method is preferably utilized for forming or producing SeOI (Semiconductor On Insulator) structures.
Inventors:
Guet von nguyen
Nadia Ben Mohamed
Alice Bussagor
Go Akatsu
Gabriella Suu Choo
Nadia Ben Mohamed
Alice Bussagor
Go Akatsu
Gabriella Suu Choo
Application Number:
JP2007531847A
Publication Date:
October 03, 2012
Filing Date:
September 21, 2004
Export Citation:
Assignee:
Soitec
International Classes:
H01L27/12; H01L21/02; H01L21/265
Domestic Patent References:
| JP11329996A | ||||
| JP1187668A | ||||
| JP2001168046A |
Foreign References:
| WO2004042779A1 |
Attorney, Agent or Firm:
Patent Business Corporation Tani/Abe Patent Office
Shigeyoshi
Shigeyoshi