Title:
A transistor provided with an electron emission device and it
Document Type and Number:
Japanese Patent JP6187436
Kind Code:
B2
Abstract:
An electron emission device includes a substrate and an electron emission layer. The electron emission layer is provided above the substrate, and is provided with an opening. The electron emission layer has an edge defining the opening and is configured to emit electrons from the edge when the edge is irradiated with light.
Inventors:
Tsuyoshi Ishikawa
Takashi Katsuno
Shigemasa Soejima
Takashi Katsuno
Shigemasa Soejima
Application Number:
JP2014234782A
Publication Date:
August 30, 2017
Filing Date:
November 19, 2014
Export Citation:
Assignee:
Toyota Central R & D Labs.
International Classes:
H01J9/02; H01J1/304; H01S3/00
Domestic Patent References:
| JP10289650A | ||||
| JP2002500817A | ||||
| JP2008016294A | ||||
| JP2003208855A | ||||
| JP53084694A | ||||
| JP48012665B1 | ||||
| JP47011147Y1 | ||||
| JP61267374A | ||||
| JP2008288099A |
Attorney, Agent or Firm:
Kaiyu International Patent Office