Title:
真空処理方法及び真空処理装置
Document Type and Number:
Japanese Patent JP4795990
Kind Code:
B2
Abstract:
A vacuum treatment method and a vacuum treatment apparatus are provided in which the SiH 2 /SiH ratio does not increase even when the deposition rate is increased, thereby deterioration in the film quality is prevented and a high level of productivity can be achieved. A vacuum treatment method comprising the steps of heating a substrate (8) disposed inside a deposition chamber (6) under a reduced pressure atmosphere using a heat spreader (a heating device) (5), and supplying electric power to a discharge electrode (3) disposed in a position facing the substrate (8), thereby conducting a deposition on the substrate (8), wherein the deposition is conducted in a state where the temperature difference between the substrate (8) and the discharge electrode (3) is not more than 30°C. The deposition may also be conducted with the gap between the substrate (8) and the discharge electrode (3) set to not more than 7.5 mm.
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Inventors:
Hiroomi Miyahara
Nishinomiya Ritsuyoshi
Nishinomiya Ritsuyoshi
Application Number:
JP2007043270A
Publication Date:
October 19, 2011
Filing Date:
February 23, 2007
Export Citation:
Assignee:
MITSUBISHI HEAVY INDUSTRIES,LTD.
International Classes:
H01L31/04; C23C16/44; C23C16/50; H01L21/205
Domestic Patent References:
| JP9148322A | ||||
| JP7201847A | ||||
| JP7254590A | ||||
| JP2006278777A | ||||
| JP2004266111A | ||||
| JP2006332676A |
Attorney, Agent or Firm:
Noriharu Fujita
Kunio Ueda
Kunio Ueda