A valuation method of an oxide semiconductor film - Semiconductor Energy Laboratory Co., Ltd.

Title:

A valuation method of an oxide semiconductor film

Document Type and Number:

Japanese Patent JP6234541

Kind Code:

B2

Abstract:

Experience shows that, in a material containing oxygen as a main component, an excess or deficiency of trace amounts of oxygen with respect to a stoichiometric composition, or the like affects properties of the material. An oxygen diffusion evaluation method of an oxide film stacked body includes the steps of: measuring a quantitative value of one of oxygen isotopes of a substrate including a first oxide film and a second oxide film which has an existence proportion of an oxygen isotope different from an existence proportion of an oxygen isotope in the first oxide film in a depth direction, by secondary ion mass spectrometry; and evaluating the one of the oxygen isotopes diffused from the first oxide film to the second oxide film.

Inventors:

Yutaka Okazaki
Imai Kataro
Atsushi Isobe
Shunpei Yamazaki

Application Number:

JP2016240230A

Publication Date:

November 22, 2017

Filing Date:

December 12, 2016

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