3-DIMENSIONAL FLASH MEMORY HAVING AIR GAP, AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2020/153813

A1

Disclosed are: a 3-dimensional flash memory having a structure that mitigates interference between neighboring cells in an oxide-nitride-oxide (ONO) layer which is a charge storing layer; and method for manufacturing same. According to an embodiment, a 3-dimensional flash memory is characterized by comprising: at least one channel layer formed extending in a first direction; a plurality of electrode layers formed extending in a second direction perpendicular to the first direction so as to be stacked vertically relative to the at least one channel layer; a plurality of air gaps interposed between the plurality of electrode layers to space the plurality of electrode layers apart from each other; and at least one ONO layer including a first oxide layer, a nitride layer, and a second oxide layer, and formed extending in the first direction so as to connect the at least one channel layer and the plurality of electrode layers, wherein the 3-dimensional flash memory has a structure that mitigates interference between cells that are in contact with the plurality of electrode layers in the at least one ONO layer.

SONG YUN HEUB (KR)

PCT/KR2020/001219

July 30, 2020

January 23, 2020

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UNIV HANYANG IND UNIV COOP FOUND (KR)

H01L27/11556; H01L21/311; H01L21/764; H01L23/31; H01L27/11524; H01L27/1157; H01L27/11582

KR20170036878A	2017-04-03
KR20120003169A	2012-01-10
KR20120103044A	2012-09-19
KR20110128717A	2011-11-30
US20160020225A1	2016-01-21

Y.P.LEE, MOCK & PARTNERS (KR)

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