Title:
3D NAND FLASH MEMORY DEVICE AND INTEGRATION METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2021/232259
Kind Code:
A1
Abstract:
An integration method for a 3D NAND flash memory device includes disposing a plurality of 3D triple-level cell (TLC) NAND flash memories on a CMOS die; disposing at least a NOR Flash memory on the CMOS die of the 3D NAND flash memory device; and connecting the at least a NOR Flash memory to an Open NAND Flash Interface (ONFI) of the 3D NAND flash memory device; wherein the at least a NOR Flash memory is disposed on an unused area of the CMOS die.
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Inventors:
GU YI (CN)
HOU CHUNYUAN (CN)
LI YUEPING (CN)
CHEN JIAWEI (CN)
HOU CHUNYUAN (CN)
LI YUEPING (CN)
CHEN JIAWEI (CN)
Application Number:
PCT/CN2020/091137
Publication Date:
November 25, 2021
Filing Date:
May 20, 2020
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/11529; G11C16/04; H01L27/11553; H01L27/11573; H01L27/11578
Foreign References:
| CN110537260A | 2019-12-03 | |||
| CN203276860U | 2013-11-06 | |||
| CN105590866A | 2016-05-18 | |||
| CN102544022A | 2012-07-04 | |||
| US20110072200A1 | 2011-03-24 | |||
| CN104035897A | 2014-09-10 | |||
| CN102177549A | 2011-09-07 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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