Title:
ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, RESIST FILM, ELECTRONIC DEVICE MANUFACTURING METHOD, COMPOUND, AND COMPOUND PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2021/241086
Kind Code:
A1
Abstract:
The present invention is provided with an actinic-ray-sensitive or radiation-sensitive resin composition, a resist film, a pattern formation method, an electronic device manufacturing method, a compound, and a compound production method which are capable of obtaining a pattern excellent in LWR performance. This actinic-ray-sensitive or radiation-sensitive resin composition comprises a resin having a repeating unit having a group that is decomposed by action of acid to increase a polarity. The actinic-ray-sensitive or radiation-sensitive resin composition further comprises a compound having at least one cation represented by general formula (1), in addition to the resin; or the resin further has a repeating unit having the cation represented by general formula (1), in addition to the foregoing repeating unit.
Inventors:
GOTO AKIYOSHI (JP)
TAKADA AKIRA (JP)
USHIYAMA AINA (JP)
KOJIMA MASAFUMI (JP)
SHIRAKAWA MICHIHIRO (JP)
TAKADA AKIRA (JP)
USHIYAMA AINA (JP)
KOJIMA MASAFUMI (JP)
SHIRAKAWA MICHIHIRO (JP)
Application Number:
PCT/JP2021/016156
Publication Date:
December 02, 2021
Filing Date:
April 21, 2021
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
C07C303/22; C07C309/06; C07C309/17; C07C381/12; C09K3/00; G03F7/004; G03F7/038; G03F7/039; G03F7/20
Domestic Patent References:
| WO2021039244A1 | 2021-03-04 | |||
| WO2018193954A1 | 2018-10-25 | |||
| WO2020004306A1 | 2020-01-02 | |||
| WO2014002808A1 | 2014-01-03 |
Foreign References:
| JP2001114822A | 2001-04-24 | |||
| JP2000034274A | 2000-02-02 | |||
| JP2009019028A | 2009-01-29 | |||
| JP2014041327A | 2014-03-06 | |||
| JP2013011833A | 2013-01-17 | |||
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| JP2013061648A | 2013-04-04 | |||
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Other References:
JOURNAL OF THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 6924, 2008, pages 692420
"Semiconductor Process Text Book", 2007, SEMI JAPAN, article "Etching"
"EUV Resist Curing Technique for LWR Reduction and Etch Selectivity Enhancement", PROC. OF SPIE, vol. 8328
ACS NANO, vol. 4, no. 8, pages 4815 - 4823
IMAZEKI, SHIGEAKISUMINO, MOTOSHIGEFUKASAWA, KAZUHITOISHIHARA, MASAMIAKIYAMA, TAKAHIKO, SYNTHESIS, vol. 10, 2004, pages 1648 - 1654
See also references of EP 4159716A4
"Semiconductor Process Text Book", 2007, SEMI JAPAN, article "Etching"
"EUV Resist Curing Technique for LWR Reduction and Etch Selectivity Enhancement", PROC. OF SPIE, vol. 8328
ACS NANO, vol. 4, no. 8, pages 4815 - 4823
IMAZEKI, SHIGEAKISUMINO, MOTOSHIGEFUKASAWA, KAZUHITOISHIHARA, MASAMIAKIYAMA, TAKAHIKO, SYNTHESIS, vol. 10, 2004, pages 1648 - 1654
See also references of EP 4159716A4
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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