Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/158326
Kind Code:
A1
Abstract:
Provided is an actinic-ray-sensitive or radiation-sensitive resin composition that, when forming an ultra-fine pattern (for example a line and space pattern of 30 nm or less, a hole pattern with a hole diameter of 30 nm or less, or the like), is superior in terms of roughness performance, and that can suppress the occurrence of defects in a pattern. The actinic-ray-sensitive or radiation-sensitive resin composition contains : a resin (A) that has a repeating unit having an aromatic ring that has a halogen atom-free substituted group and a halogen atom or a halogen atom-containing organic group; and (Y) an ionic compound having a halogen atom in the cationic part. The content of said ionic compound (Y) is 5.0 mass% or more of the total solid content of said composition.

Inventors:
YOSHIMURA TSUTOMU (JP)
KOJIMA MASAFUMI (JP)
GOTO AKIYOSHI (JP)
KURUMISAWA YUMA (JP)
Application Number:
PCT/JP2022/000482
Publication Date:
July 28, 2022
Filing Date:
January 11, 2022
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
FUJIFILM CORP (JP)
International Classes:
C08F20/12; G03F7/004; G03F7/038; G03F7/039; G03F7/20
Domestic Patent References:
WO2019045107A12019-03-07
WO2020261784A12020-12-30
WO2020158417A12020-08-06
WO2014002808A12014-01-03
Foreign References:
JP2020046661A2020-03-26
JP2020046661A2020-03-26
JP2014041328A2014-03-06
JP2013228681A2013-11-07
US20150004533A12015-01-01
JP2013011833A2013-01-17
US20120251948A12012-10-04
JP2014010245A2014-01-20
JP2011248019A2011-12-08
JP2010175859A2010-08-12
JP2012032544A2012-02-16
US20080248425A12008-10-09
JP2002090991A2002-03-27
JP2014059543A2014-04-03
JP2013061648A2013-04-04
US20160070167A12016-03-10
JP2009267112A2009-11-12
JP2004235468A2004-08-19
US20100020297A12010-01-28
JP2008083384A2008-04-10
JPH03270227A1991-12-02
JPH03270227A1991-12-02
JP2013164509A2013-08-22
Other References:
"Proc. of SPIE", vol. 6924, 2008, article "Journal of The International Society for Optical Engineering", pages: 692420
"Semiconductor Process Text Book", 2007, SEMI JAPAN
"EUV Resist Curing Technique for LWR Reduction and Etch Selectivity Enhancement", PROC. OF SPIE, vol. 8328, pages 83280N - 1
ACS NANO, vol. 4, no. 8, pages 4815 - 4823
Attorney, Agent or Firm:
YONEKURA Junzo et al. (JP)
Download PDF: