Title:
ALTERNATING CYCLIC DEPOSITION OF SELECTIVE METALS AND DIELECTRICS
Document Type and Number:
WIPO Patent Application WO/2022/233217
Kind Code:
A1
Abstract:
A semiconductor structure including a first dielectric layer comprising a first conductive metal feature embedded in the first dielectric layer; and a second dielectric layer including a second conductive metal feature embedded in the second dielectric layer, the second conductive metal feature is above and directly contacts the first conductive metal feature, and an interface between the second conductive metal feature and the second dielectric layer includes a repeating scallop shape along its entire length.
Inventors:
NGUYEN SON (US)
NOGAMI TAKESHI (US)
PRANATHARTHIHARAN BALASUBRAMANIAN S (US)
NOGAMI TAKESHI (US)
PRANATHARTHIHARAN BALASUBRAMANIAN S (US)
Application Number:
PCT/CN2022/085869
Publication Date:
November 10, 2022
Filing Date:
April 08, 2022
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
H01L23/485; C23C16/52; H01L21/285
Foreign References:
| CN106164332A | 2016-11-23 | |||
| US20200173953A1 | 2020-06-04 |
Attorney, Agent or Firm:
CCPIT PATENT AND TRADEMARK LAW OFFICE (CN)
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