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Title:
ALUMINUM NITRIDE PIEZOELECTRIC THIN FILM, PIEZOELECTRIC MATERIAL, PIEZOELECTRIC COMPONENT, AND METHOD FOR MANUFACTURING ALUMINUM NITRIDE PIEZOELECTRIC THIN FILM
Document Type and Number:
WIPO Patent Application WO/2015/133422
Kind Code:
A1
Abstract:
 An aluminum nitride piezoelectric thin film having nitrogen polarity (N polarity) is obtained with exceptional productivity. Provided are an aluminum nitride piezoelectric thin film (3) containing germanium, and a method for manufacturing an aluminum nitride piezoelectric thin film by growing an aluminum nitride piezoelectric thin film containing germanium on a base material (2), through a sputtering process.

Inventors:
UMEDA KEIICHI (JP)
AKIYAMA MORITO (JP)
NAGASE TOSHIMI (JP)
NISHIKUBO KEIKO (JP)
HONDA ATSUSHI (JP)
Application Number:
PCT/JP2015/056045
Publication Date:
September 11, 2015
Filing Date:
March 02, 2015
Export Citation:
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Assignee:
MURATA MANUFACTURING CO (JP)
NAT INST OF ADVANCED IND SCIEN (JP)
International Classes:
C23C14/06; H01L41/083; H01L41/187; H01L41/27; H01L41/316; H01L41/39; H03H3/02; H03H9/17
Foreign References:
JP2009228131A2009-10-08
JP2009149953A2009-07-09
JP2011015148A2011-01-20
US7682709B12010-03-23
Attorney, Agent or Firm:
MIYAZAKI & METSUGI (JP)
Patent business corporation Miyazaki and table-of-contents patent firm (JP)
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