ANISOTROPIC FLOATING GATE MEMORY WITH MULTI-VALUE STORAGE CAPABILITY

Title:

ANISOTROPIC FLOATING GATE MEMORY WITH MULTI-VALUE STORAGE CAPABILITY

Document Type and Number:

WIPO Patent Application WO/2020/147584

Kind Code:

A1

Abstract:

The objective of the present invention is to provide a method for achieving a floating gate memory having a multi-value storage capability, and an anisotropic floating gate memory designed using the method. According to the method, multiple layers of graphene are used as a buried gate, a few layers of two-dimensional layered semiconductor materials are used as channels, and hexagonal boron nitride is used as a dielectric layer and an encapsulation layer. A floating gate memory with electrodes along different crystal orientations of GaTe is prepared by means of a van der Waals stacking technique and a micro-nano processing technique; and the electrical anisotropy of a channel material GaTe is regulated by means of changing the magnitude of a gate voltage, thereby achieving the aim of a floating gate memory with a large on-off ratio, a long data retention time, and a multi-value storage function. The method is simple in process, and can obtain a floating gate memory with an excellent performance and a multi-value storage function.

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Inventors:

HAN ZHENG VITTO (CN)
ZHANG ZHIDONG (CN)
WANG HANWEN (CN)
CHEN MAOLIN (CN)
SUN XINGDAN (CN)
LI XIAOXI (CN)
WANG ZHI (CN)

Application Number:

PCT/CN2020/000019

Publication Date:

July 23, 2020

Filing Date:

January 13, 2020

Export Citation:

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Assignee:

INST METAL RESEARCH CAS (CN)

International Classes:

H01L27/11524

Foreign References:

CN109742079A	2019-05-10
CN109004016A	2018-12-14
CN102117656A	2011-07-06
US20070187768A1	2007-08-16

Other References:

HANWEN WANG, MAO-LIN CHEN, MENGJIAN ZHU, YANING WANG, BAOJUAN DONG, XINGDAN SUN, XIAORONG ZHANG, SHIMIN CAO, XIAOXI LI, JIANQI HUA: "Gate tunable giant anisotropic resistance in ultra-thin GaTe", NATURE COMMUNICATIONS, vol. 10, no. 1, 2302, 24 May 2019 (2019-05-24), pages 1 - 8, XP055719191
HE TIAN QIUSHI GUO YUJUN XIE HUAN ZHAO CHENG LI JUDY J. CHA FENGNIAN XIA, HAN WANG: "Anisotropic Black Phosphorus Synaptic Device for Neuromorphic Applications", ADVANCED MATERIALS, vol. 28, no. 25, 27 April 2016 (2016-04-27), pages 1991 - 4997, XP055719193, ISSN: 0935-9648, DOI: 10.1002/adma.201600166

Attorney, Agent or Firm:

SHENYANG CHENCHUANG TECHNICAL PATENT AGENT LTD (CN)

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