APPARATUS AND METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL ON BASIS OF PVT METHOD

Title:

APPARATUS AND METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL ON BASIS OF PVT METHOD

Document Type and Number:

WIPO Patent Application WO/2023/201934

Kind Code:

A1

Abstract:

An apparatus and method for growing a silicon carbide single crystal on the basis of a PVT method. The apparatus comprises a growth cavity, a crucible, lifting rods, and a material chamber for holding raw materials, wherein the crucible, the lifting rods and the material chamber are all located in the growth cavity; the material chamber is located in the crucible, and comprises a plurality of material storage compartments which are independent of one another; each lifting rod penetrates, upwards from the bottom of the crucible, the bottom of the corresponding material storage compartment, and extends to the top of the material storage compartment; and by means of vertically raising or lowering the lifting rod, the top of the material storage compartment can be sealed or the sealed top of the material storage compartment can be pushed out to form a gas-phase raw material channel. According to the requirements at different growth stages of a single crystal, the lifting rods can be used to release the gas-phase raw material channels at the tops of different material storage compartments, thereby achieving step-by-step evaporation of raw materials in different temperature zones, and ensuring that the concentration of various components during the whole single-crystal growth process are substantially kept consistent, thus facilitating an improvement in the raw-material utilization rate and the crystal growth quality.

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Inventors:

MA YUAN (CN)
XUE WEIMING (CN)
PAN YAOBO (CN)

Application Number:

PCT/CN2022/111456

Publication Date:

October 26, 2023

Filing Date:

August 10, 2022

Export Citation:

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Assignee:

CEC COMPOUND SEMICONDUCTOR CO LTD (CN)

International Classes:

C30B29/36; C30B23/00

Domestic Patent References:

WO2013002540A2

2013-01-03

Foreign References:

CN114525587A	2022-05-24
CN112030232A	2020-12-04
US8858709B1	2014-10-14
JP2001072491A	2001-03-21

Attorney, Agent or Firm:

J.Z.M.C. PATENT AND TRADEMARK LAW OFFICE (CN)

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