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Patent Searching and Data


Title:
APPARATUS AND METHOD FOR INSPECTING SAMPLE SURFACE
Document Type and Number:
WIPO Patent Application WO/2007/086398
Kind Code:
A1
Abstract:
Provided are an apparatus for inspecting defects un semiconductor device manufacturing process with high precision which has not been conventionally achieved and a method for inspecting or evaluating the semiconductor devices. In the method for inspecting a sample surface by means of a mapping electron beam inspecting apparatus (1), the size of an area on the sample surface to be irradiated with an electron beam generated from an electron gun (21) is formed to be larger than a pattern size on the sample surface in substantially circular or ellipse. The electron beam is applied at substantially the center of the pattern on the sample surface, secondary electrons generated from the sample surface by electron beam irradiation are focused on the electron dectecting surface of a detector (41) and the sample surface is inspected.

Inventors:
NOJI NOBUHARU (JP)
NAITO YOSHIHIKO (JP)
SOBUKAWA HIROSI (JP)
HATAKEYAMA MASAHIRO (JP)
TERAO KENJI (JP)
MURAKAMI TAKESHI (JP)
OKUMURA KATSUYA (JP)
HIGASHIKI TATSUHIKO (JP)
Application Number:
PCT/JP2007/051045
Publication Date:
August 02, 2007
Filing Date:
January 24, 2007
Export Citation:
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Assignee:
EBARA CORP (JP)
TOSHIBA KK (JP)
NOJI NOBUHARU (JP)
NAITO YOSHIHIKO (JP)
SOBUKAWA HIROSI (JP)
HATAKEYAMA MASAHIRO (JP)
TERAO KENJI (JP)
MURAKAMI TAKESHI (JP)
OKUMURA KATSUYA (JP)
HIGASHIKI TATSUHIKO (JP)
International Classes:
G01N23/225; H01J37/29; H01J37/147; H01L21/66
Foreign References:
JPH11135056A1999-05-21
JP2001357808A2001-12-26
JP2004095281A2004-03-25
JP2002216692A2002-08-02
JP2002216694A2002-08-02
JP2005277395A2005-10-06
JP2002118158A2002-04-19
JP2000231895A2000-08-22
JP2005235777A2005-09-02
JP2005249745A2005-09-15
Attorney, Agent or Firm:
SHAMOTO, Ichio et al. (Section 206 New Ohtemachi Bldg., 2-1, Ohtemachi 2-chom, Chiyoda-ku Tokyo 04, JP)
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