Title:
APPARATUS WITH OVERLAPPING DEEP TRENCH AND SHALLOW TRENCH AND METHOD OF FABRICATING THE SAME WITH LOW DEFECT DENSITY
Document Type and Number:
WIPO Patent Application WO/2019/165107
Kind Code:
A8
Abstract:
A method (200) for fabricating conductive deep trenches in conjunction with shallow trench isolations in a semiconductor device. The described method introduces an integrated sequence during which a shallow trench is etched (210) and filled (220) before a deep trench is etched (230) and filled (240). The described method advantageously reduces cone defects and process complexity associated with the formation of a conductive deep trench within a shallow trench isolation structure. Fabricated under the integrated sequence, the conductive deep trench may extend through a shallow trench dielectric layer and into the substrate, where the top surfaces of both the conductive deep trench and shallow trench dielectric layer are substantially cone free.
Inventors:
LILLIBRIDGE THOMAS (US)
Application Number:
PCT/US2019/019005
Publication Date:
December 03, 2020
Filing Date:
February 21, 2019
Export Citation:
Assignee:
TEXAS INSTRUMENTS INC (US)
TEXAS INSTRUMENTS JAPAN LTD (JP)
TEXAS INSTRUMENTS JAPAN LTD (JP)
International Classes:
H01L21/02
Attorney, Agent or Firm:
DAVIS, Michael A., Jr. et al. (US)
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