Title:
ARRAY SUBSTRATE, MANUFACTURING METHOD OF ARRAY SUBSTRATE, AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/068317
Kind Code:
A1
Abstract:
Disclosed are an array substrate, a manufacturing method of an array substrate, and a display device. The array substrate comprises a substrate, and a gate layer, an active layer and a source/drain layer formed on the substrate. An insulation layer is formed between the gate layer and the active layer and the source/drain layer. The active layer comprises a graphene layer and a molybdenum disulfide layer arranged in a stacked manner. At least one graphene layer is positioned at one side of the active layer away from the substrate and in contact with the source/drain layer.
Inventors:
MEI XUERU (CN)
Application Number:
PCT/CN2019/115594
Publication Date:
April 15, 2021
Filing Date:
November 05, 2019
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L21/34; H01L29/786
Foreign References:
| CN107068745A | 2017-08-18 | |||
| CN107481924A | 2017-12-15 | |||
| CN107845687A | 2018-03-27 | |||
| CN105514121A | 2016-04-20 | |||
| US20190067005A1 | 2019-02-28 |
Other References:
CHANG CHIEN CHIH-SHIANG; CHANG HSUN-MING; LEE WEI-TA; TANG MING-RU; WU CHAO-HSIN; LEE SI-CHEN: "High performance MoS2TFT using graphene contact first process", AIP ADVANCES, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 7, no. 8, 29 August 2017 (2017-08-29), 2 Huntington Quadrangle, Melville, NY 11747, XP012221679, DOI: 10.1063/1.4996136
Attorney, Agent or Firm:
PURPLEVINE INTELLECTUAL PROPERTY (SHENZHEN) CO., LTD. (CN)
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