Title:
ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2017/121012
Kind Code:
A1
Abstract:
Provided are an array substrate and a manufacturing method thereof. The array substrate comprises a substrate (100), and a buffer layer (101), a first light shielding pattern (102), a passivation layer (103), a first semiconductor pattern (104), a gate insulating layer (105), a first gate pattern (106), an interlayer insulating layer (107), and two first source/drain patterns (108, 109) sequentially formed on the substrate (100). A first through hole (110) is provided passing through the interlayer insulating layer (107), the gate insulating layer (105), the first semiconductor pattern (104), and the passivation layer (103). One of the two first source/drain patterns (108, 109) is electrically connected to the first light shielding pattern (102) via the first through hole (110). A second through hole (111) is provided passing through the interlayer insulating layer (107), the gate insulating layer (105), and the first semiconductor pattern (104). The other of the two first source/drain patterns (108, 109) is electrically connected to the first semiconductor pattern (104) via the second through hole (111). In the structure and the method, a photomask of the first light shielding pattern is reused to connect the first light shielding pattern (102) to the first source/drain patterns (108, 109), so as to enhance the driving capability of a thin-film transistor.
Inventors:
ZHANG CHUNQIAN (CN)
WANG CHAO (CN)
XUE JINGFENG (CN)
WANG CHAO (CN)
XUE JINGFENG (CN)
Application Number:
PCT/CN2016/074527
Publication Date:
July 20, 2017
Filing Date:
February 25, 2016
Export Citation:
Assignee:
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L21/77; H01L27/12
Foreign References:
| KR20150075512A | 2015-07-06 | |||
| CN1949543A | 2007-04-18 | |||
| CN105093738A | 2015-11-25 | |||
| CN103268876A | 2013-08-28 | |||
| CN105097675A | 2015-11-25 |
Attorney, Agent or Firm:
CHINA WISPRO INTELLECTUAL PROPERTY LLP. (CN)
Download PDF: