Title:
ASYMMETRICAL P-N JUNCTION THERMOCOUPLE STRUCTURE AND PARAMETER DETERMINATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/181568
Kind Code:
A1
Abstract:
Disclosed by the present invention are an asymmetrical p-n junction thermocouple structure and a parameter determination method therefor; in the present invention, currents generated by a p-type semiconductor and an n-type semiconductor are made equal by means of changing the structural parameters of the p-type semiconductor and the n-type semiconductor, which thereby achieves the highly efficient output of a p-n junction thermocouple. At the same time, provided by the present invention on the basis of a numerical solution method is a p-n junction parameter determination method, by which p-n junction parameters of the optimal size are obtained.
Inventors:
WANG RUOCHEN (CN)
LUO DING (CN)
YU WEI (CN)
ZHOU WEIQI (CN)
CHEN LONG (CN)
LUO DING (CN)
YU WEI (CN)
ZHOU WEIQI (CN)
CHEN LONG (CN)
Application Number:
PCT/CN2019/078587
Publication Date:
September 17, 2020
Filing Date:
March 19, 2019
Export Citation:
Assignee:
UNIV JIANGSU (CN)
International Classes:
H01L35/32
Foreign References:
| CN103973171A | 2014-08-06 | |||
| CN105742476A | 2016-07-06 | |||
| CN102106010A | 2011-06-22 |
Attorney, Agent or Firm:
JW IP LAW FIRM (CN)
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