Title:
ATOM-BY-ATOM ASSEMBLY METHOD FOR PREPARING GALLIUM-BASED INDIUM TIN CONDUCTIVE FILM
Document Type and Number:
WIPO Patent Application WO/2022/127283
Kind Code:
A1
Abstract:
The present disclosure relates to an atom-by-atom assembly method for preparing a gallium-based indium tin conductive film, comprising: high-purity gallium, indium and tin materials are placed in an evaporation groove of a vacuum film-plating machine; atoms of components of gallium-based liquid metals are deposited on a substrate by means of heating in a vacuum so as to form a film state in which atoms are uniformly hybridized; and the components are placed in a vacuum heat treatment furnace having a temperature higher than the melting point of each component, undergo heat treatment, and form on the substrate the gallium-based indium tin conductive film of gallium-based liquid metal hybridized atoms.
Inventors:
WU YUNHUI (CN)
WU WENJIAN (CN)
FANG ZEYANG (CN)
WU WENJIAN (CN)
FANG ZEYANG (CN)
Application Number:
PCT/CN2021/121723
Publication Date:
June 23, 2022
Filing Date:
September 29, 2021
Export Citation:
Assignee:
UNIV DONGGUAN TECHNOLOGY (CN)
International Classes:
H01B13/00
Foreign References:
| CN112670028A | 2021-04-16 | |||
| CN104099586A | 2014-10-15 | |||
| CN111495210A | 2020-08-07 | |||
| CN109273169A | 2019-01-25 | |||
| CN106011750A | 2016-10-12 | |||
| JP2013077547A | 2013-04-25 |
Attorney, Agent or Firm:
DONGGUAN HENGCHENG IP AGENCY CO., LTD. (CN)
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