Title:
BACK SURFACE INCIDENT TYPE SEMICONDUCTOR PHOTO DETECTION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/203118
Kind Code:
A1
Abstract:
A semiconductor substrate (11) has a first main surface (11a) and a second main surface (11b) opposing each other. The semiconductor substrate (11) has: a first semiconductor region (13) of a first electrically conductive type; and a plurality of second semiconductor regions (15) of a second electrically conductive type that configures a pn junction with the first semiconductor region (13). The semiconductor substrate (11) comprises the plurality of second semiconductor regions (15) on the second main surface (11b) side. Each of the plurality of second semiconductor regions (15) has: a first region (17) having a textured surface (TS); and a second region (19) on which a bump electrode (35) is placed. A thickness (TH1) of the first region (17) at the deepest position of the cavities of the textured surface (TS) is smaller than an interval (D1) between the surface of the second region (19) and the deepest position in the thickness direction of the semiconductor substrate (11). The first main surface (11a) is the light incident surface to the semiconductor substrate (11).
Inventors:
TAGUCHI TOMOYA (JP)
YOSHIDA YUKI (JP)
SHIBAYAMA KATSUMI (JP)
YOSHIDA YUKI (JP)
SHIBAYAMA KATSUMI (JP)
Application Number:
PCT/JP2019/015811
Publication Date:
October 24, 2019
Filing Date:
April 11, 2019
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
International Classes:
H01L31/10
Foreign References:
| JP2011023417A | 2011-02-03 | |||
| JP2004296827A | 2004-10-21 | |||
| JP5185206B2 | 2013-04-17 | |||
| JP2013093609A | 2013-05-16 | |||
| JP2012244124A | 2012-12-10 | |||
| US20120313204A1 | 2012-12-13 | |||
| JP2011023417A | 2011-02-03 |
Other References:
See also references of EP 3783673A4
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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