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Title:
BACKUP POWER SUPPLY CELL IN MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/069003
Kind Code:
A1
Abstract:
Example implementations relate to a backup power supply in a memory cell. For example, a parallel backup power supply system can include a memory device. The memory device can include memory that is integrated in the memory device. The memory device can also include a back-up power supply cell that is integrated in the memory device and that provides back-up power supply to the memory.

Inventors:
NGUYEN HAI NGOC (US)
WANG HAN (US)
RAYMOND PATRICK A (US)
VENUGOPAL RAGHAVAN V (US)
Application Number:
PCT/US2014/063490
Publication Date:
May 06, 2016
Filing Date:
October 31, 2014
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
HEWLETT PACKARD ENTPR DEV LP (US)
International Classes:
G11C5/14; G06F1/30; H02J9/00
Domestic Patent References:
WO2014040065A12014-03-13
Foreign References:
US20130142001A12013-06-06
US20090249008A12009-10-01
US20060080515A12006-04-13
US20060015683A12006-01-19
Attorney, Agent or Firm:
ADEKUNLE, Olaolu O. et al. (3404 E. Harmony RoadMail Stop 7, Fort Collins CO, US)
Download PDF:
Claims:
What is claimed is:

1 . A back-up power supply system comprising:

a memory device comprising:

memory integrated in the memory device; and a back-up power supply cell integrated in the memory device to provide back-up power supply to the memory.

2. The system of claim 1 , further comprising a circuit board coupled to the memory and the back-up power supply cell.

3. The system of claim 1 , the memory device further comprising a plurality of pins to provide primary power to the memory device.

4. The system of claim 3, the memory device further comprising a controller to activate back-up power supply cell if a primary power supply fails.

5. The system of claim 3, the memory device further comprising a charger to:

charge the back-up power supply cell via primary power from the plurality of pins; and

stop the back-up power supply cell from being charged when the back-up power supply cell is fully charged.

6. The system of claim 1 , the memory device further comprising a power regulator to change a first voltage provided by the primary power to a second voltage, wherein the back-up power supply cell is charged with the second voltage.

7. A method for providing back-up power, comprising:

detecting a primary power supply failure by a controller in a memory device; changing a power mode associated with memory in the memory device to a self-refresh mode in response to the primary power supply failure;

activating a back-up power supply cell that is integrated in the memory device to enable the self-refresh mode; and

deactivating the back-up power supply cell in response to an enablement of the primary power supply.

8. The method of claim 7, wherein the memory is volatile memory.

9. The method of claim 8, wherein the self-refresh mode enables the volatile memory to retain stored data without primary power.

10. The method of claim 8, including transferring data stored in the volatile memory to non-volatile memory when the primary power supply is enabled.

1 1. The method of claim 7, including charging, by a charger integrated in the memory device, the back-up power supply cell when the primary power supply is enabled.

12. A method for providing back-up power, comprising:

detecting a primary power supply failure by a controller in a memory device;

activating a back-up power supply cell integrated in the memory device to provide back-up power to volatile memory integrated in the memory device;

transferring data stored in the volatile memory to non-volatile memory integrated in the memory device using the back-up power; and deactivating the back-up power supply cell when the transfer of data from volatile memory to non-volatile memory is complete.

13. The method of claim 12, including changing a power mode associated with volatile memory in the memory device to a self-refresh mode.

14. The method of claim 13, wherein transferring data stored in volatile memory to non-volatile memory includes sequentially changing the power mode associated with a number of chips in volatile memory from the self-refresh mode to the back-up power mode, wherein the back-up power supply provides additional power to a chip in the back-up power mode to transfer data to non-volatile memory.

15. The method of claim 14, including changing a power mode associated with each of the number of chips from the back-up power mode to the self-refresh mode based on a completion of the transfer of data to non-volatile memory.

Description:
BACKUP POWER SUPPLY CELL IN MEMORY DEVICE

Background

[0001] As reliance on computing systems continues to grow, so too does the demand for reliable power systems and back-up schemes for these computing systems. Servers, for example, may provide architectures for backing up data to flash or persistent memory as well as back-up power sources for powering this back-up of data after the loss of power. Backup power supplies may sometimes include energy components such as capacitors or batteries.

Brief Description of the Drawings

[0002] Figure 1 illustrates a block diagram of an example of a memory device including a back-up power supply cell according to the present disclosure;

[0003] Figure 2 illustrates a block diagram of an example of a memory device including a back-up power supply cell according to the present disclosure; and

[0004] Figure 3 illustrates a flow diagram of an example method for a backup power supply according to the present disclosure.

Detailed Description

[0005] A back-up power supply system can include a memory device. The memory device can store data used by a computing device. A backup power supply system can include an integrated back-up power supply cell. The back-up power supply cell can provide back-up power to memory integrated in the memory device. The back-up power can be provided to the memory if a primary power supply fails.

[0006] A removal of a primary power supply can be scheduled or un-scheduled. For instance, a scheduled removal of the primary power supply can be the result of scheduled maintenance on the computing device and/or the memory device. A scheduled removal of the primary power supply can be an intentional power down of the number of nodes and/or the number of loads to add and/or remove nodes to a chassis and/or network connected to a primary power supply. In another example, a scheduled removal of the primary power supply can be an intentional power down to add and/or remove one or more loads to or from one or more nodes.

[0007] An un-scheduled primary power supply removal can be a failure in the primary power supply. An un-scheduled primary power supply removal can occur when, for example, the primary power supply fails momentarily and/or for an extended period of time.

[0008] It may be desirable to provide back-up power services to memory devices associated with a computing device in the case of primary power failure. A backup power supply can be a secondary power supply. A back-up power supply can provide back-up power to the computing device and/or the memory device via a back-up power supply cell.

[0009] In a number of approaches, back-up services are provided to a memory device via a back-up power supply cell that is not integrated in the memory device. Providing back-up services via un-integrated cell requires infrastructure to provide the power from the un-integrated cells to the memory device. The un-integrated cell and the associated infrastructure can increase cost associated with providing services associated with the memory device.

[0010] In contrast, examples of the present the present disclosure integrate a back-up power supply cell in a memory device without the need for the infrastructure associated with the un-integrated cells. A memory device is defined as a device that provides memory services to a computing device. For example, a memory device can be Dual In-Line Memory Modules (DIMMs) and/or Non-Volatile Dual In-Line Memory Modules (NVDIMMs), among other types of memory modules. A memory device can include memory (e.g., a memory chip).

[0011] As used herein, memory can include non-volatile memory (e.g., persistent memory) and/or volatile memory (e.g., non-persistent memory). For example, memory can include cache memory, Random Access Memory (RAM) and/or Non-Volatile Random Access Memory (NVRAM), among other types of memory. The memory can be integrated in the memory device. For example, the memory device can include a circuit board. The memory can be coupled to the circuit board. For example, the memory can be a memory chip that is coupled to the circuit board via a number of electrical connections using conductive tracks, pads, and other features etched into the circuit board.

[0012] A back-up power supply cell can provide back-up power to the memory. The back-up power supply cell can also be integrated in memory device. That is, the back-up power supply cell can be coupled to the circuity board via a number of electrical connections using conductive tracks, pads, and other features etched into the circuit board of the memory device.

[0013] Providing an integrated back-up power supply cell can reduce the cost of providing back-up services as compared to the use of un-integrated cells. Providing back-up power services via integrated back-up power supply cells does not require infrastructure associated with un-integrated cells and the costs of providing the infrastructure.

[0014] Figure 1 illustrates a block diagram of an example of a memory device including a back-up power supply cell according to the present disclosure. As illustrated in Figure 1 , the memory device 100 includes memory in the form of memory chips 1 18-1 , 1 18-2, 1 18-3, 1 18- 4, 1 18-5, 1 18-6, 1 18-7, 1 18-8, 1 18-9, 1 18-10, 1 18-1 1 , 1 18-12, 1 18-13, 1 18-14, 1 18-15, 1 18-16, and 1 18-17 (e.g., referred to generally as memory 1 18), and a back-up power supply cell 108. In a number of examples, more or less memory chips than those shown herein can be included in the memory device 100. The memory device 100 also includes a power regulator 104, a controller 106, a charger 1 10, a discharging control circuitry 1 12, a power switch 1 14, and/or a plurality of pins 102.

[0015] In some examples, memory device 100 may be a non- transitory storage medium, where the term "non-transitory" does not encompass transitory propagating signals. As used herein, the back-up power supply cell 108 is a device that provides back-up power. For example, a cell can be a battery, among other backup power devices. The back-up power supply cell 108 can be controlled via controller 106.

[0016] Controller 106 can determine a charge level associated with the back-up power supply cell 108. The controller 106 can activate a charger 1 10 to charge the back-up power supply cell 108. The controller 106 can deactivate the charger 1 10 to stop the back-up power supply cell 108 from being charged. The charger 1 10 can be used to charge the back-up power supply cell 108 when the back-up power supply cell 108 charge level is below a threshold value. For example, the charger 1 10 can be controlled by the controller 106 to charge the backup power supply cell 108 if the charge level is below a 95% charge. A charger 1 10 can charge the back-up power supply cell 108 at an initiation (e.g., start-up) of an associated computing device and/or after primary power has been restored following primary power failure, for example.

[0017] The charger 1 10 can receive power from the power regulator 104. The power regulator 104 can receive power from the pins 102. The pins 102 can receive power from the computing device. The power provided through the pins 102 can be associated with a higher voltage than the power needed to charge bell 108. For example, the power provided through the pins 102 can be 12 volts (v). The power regulator 104 can regulate the 12v to a voltage suitable to charge the cell 108. For example, the power regulator 104 can regulate the 12v input power to an 8v power output that can be used by the charger 1 10 to charge the cell 108. However, the power regulator 104 can regulate the 12v to a voltage that is higher or lower than 8v.

[0018] The controller 106 can provide back-up power to memory 1 18 in the case of primary power failure. The controller 106 can activate the discharging control circuitry 1 12 to discharge the back-up power supply cell 108. The controller can activate discharge control circuitry 1 12 to drain the back-up power supply cell 108. The back-up power can be channeled through discharging control circuitry 1 12 and the power switch 1 14 to the memory 1 18. The controller can activate the power switch 1 14 to provide the back-up power to the memory 1 18 in the case of primary power failure. However, if there is no primary power failure, the power switch can be activated to drain the backup power through the pins 102.

[0019] The pins 102 are a coupling point between the memory device 100 and a computing device. The pins 102 can be used to transfer data from the memory 1 18 to the computing device and to transfer power to and from the backup power supply cell 108. The pins 102 can confirm to a given layout used by the memory device 100. The bus 1 16 can be used to transfer data to and from the memory 1 18. For example, the bus can be a memory input output (I/O) bus.

[0020] The memory 1 18 in Figure 1 is volatile memory. For example, each of the memory chips associated with memory 1 18 can be a RAM. The memory 1 18 can retain data stored in the memory chips as long as the memory 1 18 receives power. In the occurrence of a primary power outage, the volatile memory chip loose the data stored in the memory.

[0021] The controller 106 and/or a processor associated with the computing device can detect a failure in the primary power supply. The controller 106 can place the memory chips in one of a number of power modes. Power modes associated with the memory 1 18 can define how the device consumes primary power and/or back-up power. For example, the controller 106 can place the memory 1 18 in a self-refresh mode and/or in a back-up power mode. A back-up power mode is further defined in Figure 2.

[0022] A self-refresh mode provides the ability to suspend operation of the controller 106 to save power without losing data stored in the memory 1 18. In a self-refresh mode, the data cannot be retrieved from memory 1 18 and data cannot be saved into memory 1 18. Placing memory 1 18 in a self-refresh mode also saves power by reducing the refresh rate associated with memory 1 18. In a number of examples, placing memory 1 18 in self-refresh mode can save a greater amount of power than placing memory 1 18 in a back-up power mode or a mode associated with normal operation of the memory 1 18.

[0023] In self-refresh mode the memory 1 18 draws power from the cell 108. The power drawn from the cells 108 is only sufficient to retain data stored in memory 1 18. In self-refresh mode, the memory 1 18 draws power indefinitely until primary power is returned to memory device 100.

[0024] Upon the return of primary power, the controller 106 can be activated and the memory 1 18 can be placed in a mode associated with normal operation on the memory 1 18. Upon the return of primary power, the controller 106 can deactivate the back-up power supply cell 108 by deactivating the discharging control circuitry 1 12. The controller can also charge the back-up power supply cell by activating the charger 1 10.

[0025] As a result of placing the memory 1 18 in a self-refresh mode, the volatile memory 1 18 can retain the data stored in memory 1 18 during primary power failure without the use of a back-up power supply that is not integrated in the memory device 100. That is, the memory device 100 can be persistent memory without the use of non-volatile memory.

[0026] Figure 2 illustrates a block diagram of an example of a memory device including a back-up power supply cell according to the present disclosure. The memory device 200 includes memory in the form of volatile memory chips 218-1 , 218-2, 218-3, 218-4, 218-5, 218-6, 218-7, 218-8, 218-9 (e.g., referred to herein as volatile memory 218) which are analogous to memory chips 1 18-1 to 18-17 in Figure 1 , and non-volatile memory chips 232-1 , 232-2, 232-3, 232-4, 232-5, 232-6, 232-7, 232-8 (e.g., referred to herein as non-volatile memory 232). The memory device 200 also includes a back-up power supply cell 208 which is analogous to back-up power supply cell 108. In a number of examples, more or less volatile memory chips 218-1 to 218-9 and nonvolatile memory chips 232-1 to 232-8 than those shown herein can be included in the memory device 200. The memory device 200 also includes a power regulator 204, a controller 206, a charger 210, a discharging control circuitry 212, a power switch 214, and a plurality of pins 202 that are analogous to a power regulator 104, a controller 106, a charger 1 10, a discharging control circuitry 1 12, a power switch 1 14, and a plurality of pins 102.

[0027] Figure 2 provides an example of providing back-up power to transfer data stored in the volatile memory 218 to non-volatile memory 232. In a number of examples, the controller 206 can identify a primary power failure and place the volatile memory 218 in a self-refresh mode.

[0028] After placing the volatile memory 218 in self-refresh mode, the controller 206 can sequentially change the power mode associated with the number of volatile memory 218 to allow data stored in the volatile memory 218 to be transferred to non-volatile memory 232.

Changing the power mode associated with the volatile memory 218-1 to allow transfer of data can include changing from self-refresh mode to a mode that consumes more energy. For example, a power mode associated with the volatile memory 218 can be changed from a self- refresh mode to a back-up power mode.

[0029] The back-up power mode can allow a transfer of data from the volatile memory 218. The back-up power mode can consume more energy than the self-refresh mode because the back-up power mode receives instructions from an activated controller and because the backup power mode can support data transfers from volatile memory 218. However, volatile memory 218 in a back-up power mode can use less energy than a normal operation of the volatile memory 218.

[0030] A power mode associated with the volatile memory 218 can be sequentially changed from a self-refresh mode to a back-up power mode. Sequentially changing volatile memory 218 from a self-refresh mode to a back-up power mode can include changing each of the volatile memory chips individually one after another. For example, the volatile memory chip 218-1 can be changed to a back-up power mode before the other volatile memory chips 218-2 to 218-9 are changed to a back-up power mode. The volatile memory chip 218-2 can be changed to a backup power mode after the volatile memory chip 218-1 is changed to the back-up power mode but before the other volatile memory chips 218-3 to 218-9 are changed to the back-up power mode. The volatile memory chip 218-3 can be changed to the back-up power mode after the volatile memory chips 218-1 and 218-2 are changed to the back-up power mode but before the other volatile memory chips 218-4 to 218-9 are changed to the back-up power mode. The volatile memory chip 218-4 can be changed to the back-up power mode after the volatile memory chips 218- 1 and 218-3 are changed to the back-up power mode but before the other volatile memory chips 218-5 to 218-9 are changed to the back-up power mode.

[0031] The volatile memory chip 218-5 can be changed to the back-up power mode after the volatile memory chips 218-1 and 218-4 are changed to the back-up power mode but before the other volatile memory chips 218-6 to 218-9 are changed to the back-up power mode. The volatile memory chip 218-7 can be changed to the back-up power mode after the volatile memory chips 218-1 and 218-6 are changed to the back-up power mode but before the other volatile memory chips 218- 8 to 218-9 are changed to the back-up power mode. The volatile memory chip 218-8 can be changed to the back-up power mode after the volatile memory chips 218-1 and 218-7 are changed to the back-up power mode but before the volatile memory chip 218-9 is changed to the back-up power mode. The volatile memory chip 218-9 can be changed to the back-up power mode after the volatile memory chips 218-1 and 218-8 are changed to the back-up power mode.

[0032] During the operation of the volatile memory 218 in back-up power mode, data stored in the volatile memory 218 can be transferred to the non-volatile memory 232 during a primary power failure.

Transferring data from the volatile memory 218 to the non-volatile memory 232 can store that data such that the primary power failure does not affect the ability to recall the data (e.g., the data is not lost) from memory device 200 when the primary power is activated. The data can be transferred from volatile memory 218 to non-volatile memory 232 via bus 230. In a number of examples, bus 230 can be analogous to bus 1 16 and/or it can be a different bus. For example, bus 230 can be used to only transfer data between volatile memory 218 and non-volatile memory 232 and not to transfer data to the computing device coupled to the memory device 200.

[0033] The transfer of data can be performed round robin.

Transferring data round robin can include completing the transfer of data from a first memory chip before initiating a transfer of data from a second memory chip. For example, the transfer of data stored in the volatile memory chip 218-1 can be initiated and completed before the data stored in volatile memory chips 218-2 to 218-9 is transferred. The transfer of data stored in the volatile memory chip 218-2 can be initiated and completed before the data stored in volatile memory chips 218-3 to 218-9 is transferred. The transfer of data stored in the volatile memory chip 218-3 can be initiated and completed before the data stored in volatile memory chips 218-4 to 218-9 is transferred. The transfer of data stored in the volatile memory chip 218-4 can be initiated and completed before the data stored in volatile memory chips 218-5 to 218-9 is transferred.

[0034] The transfer of data stored in the volatile memory chip 218- 5 can be initiated and completed before the data stored in volatile memory chips 218-6 to 218-9 is transferred. The transfer of data stored in the volatile memory chip 218-6 can be initiated and completed before the data stored in volatile memory chips 218-7 to 218-9 is transferred. The transfer of data stored in the volatile memory chip 218-7 can be initiated and completed before the data stored in volatile memory chips 218-8 to 218-9 is transferred. The transfer of data stored in the volatile memory chip 218-8 can be initiated and completed before the data stored in volatile memory chip 218-9 is transferred. The transferred of data stored in the volatile memory chip 218-9 can be initiated after the data stored in the volatile memory chips 218-1 to 218-8 has been transferred.

[0035] Transferring data round robin can maintain one volatile memory chip in back-up power mode and the remaining volatile memory chips in self-refresh mode. Maintaining only one volatile memory chip in back-up power mode while the remaining volatile memory chips are in self-refresh mode can save energy over maintaining all of the volatile memory chips 218 in back-up mode because volatile memory chips 218 in self-refresh mode consume less energy than volatile memory chips 218 in back-up mode.

[0036] Transferring data to non-volatile memory 232 can include activating all of the non-volatile memory chips at once or activating each of the non-volatile memory chips at a given time. For example, each of the non-volatile memory chips 232 can be activated round robin to receive and store the data from the volatile memory chips 218.

Activating one non-volatile memory chip at a time can save energy over activating all of the memory chips at once. Activating one non-volatile memory chip at a given time can occur when data transferred from the volatile memory 218 is only stored in one non-volatile memory chip at a given time.

[0037] Figure 3 illustrates a flow diagram of an example method for a backup power supply according to the present disclosure. At 340, a primary power failure can be detected by a controller in a memory device. The controller in the memory device can be alerted of the power failure by a processor associated with the computing device coupled to the memory device and/or by analyzing the power provided by a number of pins associated with the memory device. For example, the controller can detect a change in voltage being provided by the pins.

[0038] At 342, the a back-up power supply cell that is integrated in the memory device can be activated to provide back-up power to volatile memory integrated in the memory device. In a number of examples, the back-up power supply can be charged before being activated from power provided via the pins associated with the memory device, wherein the pins are integrated in the memory device. The pins can be integrated in the memory device when they are formed into the circuit board associated with the memory device. In a number of examples, the backup power supply can be charged via a connection point that is part of the back-up power supply and that receives power directly from the computing device and not from the pins associated with the memory device.

[0039] At 344, the data stored in volatile memory can be transferred to non-volatile memory. The volatile memory can be integrated in the memory device. The data can be transferred using back-up power from the back-up power supply cell. At 346, the back-up power supply cell can be deactivated when the transfer of data from volatile memory to non-volatile memory is complete. Deactivating the back-up power supply during primary power failure can result in the data stored in the volatile memory being lost. However, the data stored in the non-volatile memory will not be lost. As a result, the volatile memory in the memory device can function as non-volatile memory. Using volatile memory and non-volatile memory in the same memory device can decrease the cost of the memory device as compared to only using nonvolatile memory in the memory devices as volatile memory cost less than non-volatile memory.

[0040] In the present disclosure, reference is made to the accompanying drawings that form a part hereof, and in which is shown by way of illustration how a number of examples of the disclosure may be capable of being practiced. These examples are described in sufficient detail to enable those of ordinary skill in the art to practice the examples of this disclosure, and it is to be understood that other examples may be capable of being used and that process, electrical, and/or structural changes may be capable of being made without departing from the scope of the present disclosure.

[0041] The figures herein follow a numbering convention in which the first digit corresponds to the drawing figure number and the remaining digits identify an element or component in the drawing. Elements shown in the various figures herein may be capable of being added, exchanged, and/or eliminated so as to provide a number of additional examples of the present disclosure. In addition, the proportion and the relative scale of the elements provided in the figures are intended to illustrate the examples of the present disclosure, and should not be taken in a limiting sense.

[0042] As used herein, "logic" is an alternative or additional processing resource to perform a particular action and/or function, etc., described herein, which includes hardware, e.g., various forms of transistor logic, application specific integrated circuits (ASICs), etc., as opposed to computer executable instructions, e.g., firmware, etc., stored in memory and executable by a processor. Further, as used herein, "a" or "a number of something can refer to one or more such things. For example, "a number of widgets" can refer to one or more widgets. Also, as used herein, "a plurality of something can refer to more than one of such things.

[0043] The above specification, examples and data provide a description of the method and applications, and use of the system and method of the present disclosure. Since many examples may be capable of being made without departing from the spirit and scope of the system and method of the present disclosure, this specification merely sets forth some of the many possible example configurations and implementations.