Title:
BASE SUBSTRATE, SINGLE CRYSTAL DIAMOND MULTILAYER SUBSTRATE, METHOD FOR PRODUCING BASE SUBSTRATE, AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND MULTILAYER SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2024/053384
Kind Code:
A1
Abstract:
The present invention is a method for producing a base substrate for a single crystal diamond multilayer substrate, the method comprising a step for preparing an initial substrate and a step for forming an intermediate layer comprising at least a single crystal Ir film or a single crystal MgO film on the initial substrate, in which the formation of the single crystal Ir film or the single crystal MgO film constituting the intermediate layer is performed by employing a mist CVD method. According to this configuration, a method for producing a base substrate is provided, whereby it becomes possible to produce a high-quality single crystal diamond layer which is applicable to electronic/magnetic devices, has a large area (a large diameter) and high crystallinity, is reduced in the formation of abnormally grown particles including hillocks and twin crystals, dislocation defects and the like, and has high purity and low stress.
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Inventors:
NOGUCHI HITOSHI (JP)
Application Number:
PCT/JP2023/030067
Publication Date:
March 14, 2024
Filing Date:
August 22, 2023
Export Citation:
Assignee:
SHINETSU CHEMICAL CO (JP)
International Classes:
C30B29/04; C23C14/14; C23C14/35; C23C16/40; C30B25/18; H01L21/20
Domestic Patent References:
| WO2022138788A1 | 2022-06-30 | |||
| WO2015199180A1 | 2015-12-30 |
Foreign References:
| JP2018127367A | 2018-08-16 | |||
| JP2014154734A | 2014-08-25 | |||
| JP2013180942A | 2013-09-12 | |||
| JP2013095944A | 2013-05-20 | |||
| JP2021085050A | 2021-06-03 | |||
| JP2019033142A | 2019-02-28 | |||
| JP2014063973A | 2014-04-10 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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