Title:
BCE IGZO TFT DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/082094
Kind Code:
A1
Abstract:
A BCE IGZO TFT device and a manufacturing method therefor, characterized by the method comprising: providing a substrate; depositing a first metal layer on the substrate, and subjecting the first metal layer to a patterning process to form a gate electrode and a first electrode layer; depositing a gate insulating layer on the substrate, the gate electrode and the first electrode layer; subjecting the gate insulating layer to an etching process to remove part of the gate insulating layer on a surface of the first electrode layer; depositing an active layer on the first electrode layer and the gate insulating layer, and the active layer being in direct contact with the first electrode layer; and depositing a second metal layer on the active layer, and subjecting the second metal layer to a patterning process to form a source electrode, a drain electrode and a second electrode layer.
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Inventors:
WU WEI (CN)
Application Number:
PCT/CN2019/118966
Publication Date:
May 06, 2021
Filing Date:
November 15, 2019
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L27/12; H01L29/786
Foreign References:
| CN103219394A | 2013-07-24 | |||
| CN103400838A | 2013-11-20 | |||
| CN101740632A | 2010-06-16 | |||
| CN108780797A | 2018-11-09 |
Attorney, Agent or Firm:
PURPLEVINE INTELLECTUAL PROPERTY (SHENZHEN) CO., LTD (CN)
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