Title:
BETAVOLTAIC BATTERY AND METHOD FOR MANUFACTURING BETAVOLTAIC BATTERY
Document Type and Number:
WIPO Patent Application WO/2021/261896
Kind Code:
A1
Abstract:
The present invention relates to a betavoltaic battery comprising: a substrate; an intrinsic semiconductor unit disposed on the substrate; an N-type semiconductor unit and a P-type semiconductor unit that are disposed on at least a portion of a surface of the intrinsic semiconductor unit and arranged alternately; and beta ray sources that are disposed on the N-type semiconductor unit and the P-type semiconductor unit. The present invention also relates to a method for manufacturing a betavoltaic battery, comprising the steps of: (A) forming an intrinsic semiconductor unit on a substrate; (B) forming an N-type semiconductor unit and a P-type semiconductor unit alternately by irradiating at least a portion of the surface of the intrinsic semiconductor unit with an ion beam; and (C) disposing a beta ray source on the N-type semiconductor unit and the P-type semiconductor unit.
Inventors:
KIM DONG SEOK (KR)
YOON YOUNG JUN (KR)
LEE JAE SANG (KR)
YOON YOUNG JUN (KR)
LEE JAE SANG (KR)
Application Number:
PCT/KR2021/007846
Publication Date:
December 30, 2021
Filing Date:
June 22, 2021
Export Citation:
Assignee:
KOREA ATOMIC ENERGY RES (KR)
International Classes:
G21H1/06; G21H1/02
Foreign References:
| KR101546310B1 | 2015-08-21 | |||
| CN103730182A | 2014-04-16 |
Other References:
AYDIN S., KAM E.: "Investigation of nickel‐63 radioisotope‐powered GaN betavoltaic nuclear battery", INTERNATIONAL JOURNAL OF ENERGY RESEARCH, WILEY, CHICHESTER, GB, GB , XP055882741, ISSN: 0363-907X, DOI: 10.1002/er.4871
SHI YA-TING, REN FANG-FANG, XU WEI-ZONG, CHEN XUANHU, YE JIANDONG, LI LI, ZHOU DONG, ZHANG RONG, ZHENG YOUDOU, TAN HARK HOE, JAGAD: "Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices", SCIENTIFIC REPORTS, vol. 9, no. 1, 1 December 2019 (2019-12-01), pages 8796, XP055882744, DOI: 10.1038/s41598-019-45177-0
YOON YOUNG JUN, JAE SANG LEE, IN MAN KANG, JUNG-HEE LEE, DONG-SEOK KIM: "Design and optimization of GaN‐based betavoltaic cell for enhanced output power density", INTERNATIONAL JOURNAL OF ENERGY RESEARCH, vol. 45, no. 1, 27 September 2020 (2020-09-27), pages 799 - 806, XP055882751, DOI: 10.1002/er.5909
SHI YA-TING, REN FANG-FANG, XU WEI-ZONG, CHEN XUANHU, YE JIANDONG, LI LI, ZHOU DONG, ZHANG RONG, ZHENG YOUDOU, TAN HARK HOE, JAGAD: "Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices", SCIENTIFIC REPORTS, vol. 9, no. 1, 1 December 2019 (2019-12-01), pages 8796, XP055882744, DOI: 10.1038/s41598-019-45177-0
YOON YOUNG JUN, JAE SANG LEE, IN MAN KANG, JUNG-HEE LEE, DONG-SEOK KIM: "Design and optimization of GaN‐based betavoltaic cell for enhanced output power density", INTERNATIONAL JOURNAL OF ENERGY RESEARCH, vol. 45, no. 1, 27 September 2020 (2020-09-27), pages 799 - 806, XP055882751, DOI: 10.1002/er.5909
Attorney, Agent or Firm:
BAE, KIM & LEE IP (KR)
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