Title:
BI-GE-O SINTERED BODY SPUTTERING TARGET, METHOD FOR PRODUCING SAME, AND OPTICAL RECORDING MEDIUM
Document Type and Number:
WIPO Patent Application WO/2011/062021
Kind Code:
A1
Abstract:
Disclosed are: a Bi-Ge-O sintered body sputtering target which is composed of bismuth (Bi), germanium (Ge) and oxygen (O) and characterized in that the atom number ratio of Bi and Ge satisfies 0.57 < (Bi/(Bi + Ge)) < 0.75 and the crystal phase is configured of two phases, namely Bi12GeO20 and Bi4Ge3O12; a method for producing the Bi-Ge-O sintered body sputtering target; and an optical recording medium. Specifically disclosed is a Bi-Ge-O sintered body sputtering target which has excellent thermal shock resistance and is capable of achieving greatly improved production efficiency since the Bi-Ge-O sintered body sputtering target enables high-power sputtering. The Bi-Ge-O sintered body sputtering target does not suffer from cracks and generates little particles during the sputtering, so that a thin film with high quality can be stably produced and an optical recording medium that is free from recording bit errors can be obtained. Also specifically disclosed are: a method for producing the Bi-Ge-O sintered body sputtering target; and an optical recording medium.
Inventors:
NARA ATSUSHI (JP)
Application Number:
PCT/JP2010/068547
Publication Date:
May 26, 2011
Filing Date:
October 21, 2010
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
NARA ATSUSHI (JP)
NARA ATSUSHI (JP)
International Classes:
C23C14/34; C04B35/00; G11B7/26
Foreign References:
| JPS5313200A | 1978-02-06 | |||
| JPS51109300A | 1976-09-28 | |||
| JPS58167429A | 1983-10-03 | |||
| JP2003277923A | 2003-10-02 |
Attorney, Agent or Firm:
OGOSHI ISAMU (JP)
Isamu Ogoshi (JP)
Isamu Ogoshi (JP)
Download PDF:
Previous Patent: SOLAR CELL MODULE, SOLAR POWER GENERATING APPARATUS, AND WINDOW
Next Patent: SHADE DEVICE
Next Patent: SHADE DEVICE