Title:
BIMORPH ELEMENT, BIMORPH SWITCH, MIRROR ELEMENT, AND PROCESS FOR PRODUCING THEM
Document Type and Number:
WIPO Patent Application WO/2006/025456
Kind Code:
A1
Abstract:
This invention provides a bimorph element comprising a silicon oxide layer, a higher-expansion coefficient layer provided on the silicon oxide layer and having a higher coefficient of thermal expansion than the silicon oxide layer, and a deformation preventive film covering the surface of the silicon oxide layer and capable of preventing the deformation of the silicon oxide layer with the elapse of time. The deformation preventive film may have lower water content and oxygen permeability than the silicon oxide layer and may be silicon oxide in a film form formed at a higher energy than that in the formation of the silicon oxide layer, may be a silicon nitride film, or may be a metal film.
Inventors:
TAKAYANAGI FUMIKAZU (JP)
SANPEI HIROKAZU (JP)
SANPEI HIROKAZU (JP)
Application Number:
PCT/JP2005/015928
Publication Date:
March 09, 2006
Filing Date:
August 31, 2005
Export Citation:
Assignee:
ADVANTEST CORP (JP)
TAKAYANAGI FUMIKAZU (JP)
SANPEI HIROKAZU (JP)
TAKAYANAGI FUMIKAZU (JP)
SANPEI HIROKAZU (JP)
International Classes:
H01H61/01; B81B3/00; G02B26/08; H01H61/013; H01H37/14; H01H37/52
Domestic Patent References:
| WO2003060592A1 | 2003-07-24 |
Foreign References:
| JP2003062798A | 2003-03-05 | |||
| JP2001168406A | 2001-06-22 |
Attorney, Agent or Firm:
Ryuka, Akihiro (22-1 Nishi-Shinjuku 6-chom, Shinjuku-ku Tokyo, JP)
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