Title:
BIOLOGICAL COMPONENT DETECTION DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/073769
Kind Code:
A1
Abstract:
Provided is a biological component detection device whereby a biological component can be detected at a high sensitivity by using an InP-based photodiode in which dark current is reduced without using a cooling mechanism and the light receiving sensitivity is elevated to a wavelength of 1.8 μm or more. A biological component detection device wherein a light-receiving layer (3) has a multiple quantum well structure of a III-V group semiconductor, a p-n junction (15) is formed by selectively diffusing impurity elements in the light-receiving layer and the concentration of impurities in the light-receiving layer is not more than 5×1016/cm3, characterized in that an examination is conducted therein by receiving at least one light having a wavelength included in the absorption band of the biological component of 3 μm or less.
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Inventors:
NAGAI YOUICHI (JP)
IGUCHI YASUHIRO (JP)
IGUCHI YASUHIRO (JP)
Application Number:
PCT/JP2009/063580
Publication Date:
July 01, 2010
Filing Date:
July 30, 2009
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
NAGAI YOUICHI (JP)
IGUCHI YASUHIRO (JP)
NAGAI YOUICHI (JP)
IGUCHI YASUHIRO (JP)
International Classes:
A61B5/1455; B82Y15/00; B82Y20/00; G01J1/02; G01N21/17; G01N21/35; G01N21/3577; G01N21/359; H01L31/10
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Other References:
A.YAMAMOTO ET AL.: "Optical properties of GaAs0.5Sb0.5 and In0.53Ga0.47As/GaAs0.5Sb0.5 type II single hetero-structures lattice- matched to InP substrates grown by molecular beam epitaxy", JOURNAL OF CRYSTAL GROWTH, vol. 201, no. 202, 1999, pages 872 - 876, XP004175256
MASAO NAKAYAMA: "Technology trend of infrared detectors", SENSOR TECHNOLOGY, vol. 9, no. 3, March 1989 (1989-03-01), pages 61 - 64
R. SIDHU: "A Long-Wavelength Photodiode on InP Using Lattice-Matched GaInAs-GaAsSb Type-11 Quantum Wells", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 17, no. 12, 2005, pages 2715 - 2717, XP008146947, DOI: doi:10.1109/LPT.2005.859163
MASAO NAKAYAMA: "Technology trend of infrared detectors", SENSOR TECHNOLOGY, vol. 9, no. 3, March 1989 (1989-03-01), pages 61 - 64
R. SIDHU: "A Long-Wavelength Photodiode on InP Using Lattice-Matched GaInAs-GaAsSb Type-11 Quantum Wells", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 17, no. 12, 2005, pages 2715 - 2717, XP008146947, DOI: doi:10.1109/LPT.2005.859163
Attorney, Agent or Firm:
Heart Cluster Corporation et al. (JP)
Patent business corporation heart cluster (JP)
Patent business corporation heart cluster (JP)
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