Title:
BIOSENSOR, METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR FOR BIOSENSOR, AND FIELD EFFECT TRANSISTOR FOR BIOSENSOR
Document Type and Number:
WIPO Patent Application WO/2022/102759
Kind Code:
A1
Abstract:
Provided are: a biosensor which has a simpler configuration and can be manufactured through a simpler manufacturing process than conventional biosensors; a method for manufacturing a field effect transistor for a biosensor; and a field effect transistor for a biosensor. A biosensor 10 for detecting an electric signal that varies with the ion concentration of a solution 20 comprises: a FET 12 composed of an ITO film 16 and provided on a glass substrate 14; and a storage part 22 for storing the solution 20 containing a sample. The ITO film 16 has a source electrode 12A, a drain electrode 12B, and a channel part 12C that is disposed between the source electrode 12A and the drain electrode 12B and is in contact with the solution 20. The film thickness of the channel part 12C is formed thinner than those of the source electrode 12A and the drain electrode 12B.
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Inventors:
SAKATA TOSHIYA (JP)
SAITO AKIKO (JP)
NISHITANI SHOICHI (JP)
SAITO AKIKO (JP)
NISHITANI SHOICHI (JP)
Application Number:
PCT/JP2021/041808
Publication Date:
May 19, 2022
Filing Date:
November 12, 2021
Export Citation:
Assignee:
UNIV TOKYO (JP)
International Classes:
G01N27/414
Domestic Patent References:
| WO2019200164A1 | 2019-10-17 | |||
| WO2006097566A1 | 2006-09-21 |
Foreign References:
| JP2010045159A | 2010-02-25 | |||
| JPS6450944A | 1989-02-27 | |||
| JPH0792136A | 1995-04-07 | |||
| JP2012122749A | 2012-06-28 | |||
| JP2002286692A | 2002-10-03 | |||
| JP2012073154A | 2012-04-12 |
Attorney, Agent or Firm:
DORAIT IP LAW FIRM (JP)
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