BIPOLAR JUNCTION TRANSISTOR WITH VERTICALLY INTEGRATED RESISTOR

Title:

BIPOLAR JUNCTION TRANSISTOR WITH VERTICALLY INTEGRATED RESISTOR

Document Type and Number:

WIPO Patent Application WO/2022/121674

Kind Code:

A1

Abstract:

Vertical bipolar junction transistors (VBJTs), each with one or more resistors connected in a circuit in different circuit configurations, are disclosed. The VBJT has an emitter substructure that includes an emitter layer, a collector, an intrinsic base, one or more doped epitaxy regions, and one or more resistors. The intrinsic base, the doped epitaxy region (s), and the resistor (s) are stacked upon one another in a channel between the emitter layer and the collector. Various circuit configurations and structures are described including a common-collector circuit, a common-emitter circuit, and an emitter-degenerate circuit. Methods of making these configuration/structures are disclosed.

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Inventors:

REZNICEK ALEXANDER (US)
HEKMATSHOARTABARI BAHMAN (US)
BALAKRISHNAN KARTHIK (US)

Application Number:

PCT/CN2021/132220

Publication Date:

June 16, 2022

Filing Date:

November 23, 2021

Export Citation:

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Assignee:

IBM (US)
IBM CHINA CO LTD (CN)

International Classes:

H01L29/417; H01L29/737

Foreign References:

CN103872107A	2014-06-18
CN108091689A	2018-05-29
CN103325782A	2013-09-25
CN1367535A	2002-09-04
US20190189745A1	2019-06-20
US20030052721A1	2003-03-20

Attorney, Agent or Firm:

LIU, SHEN & ASSOCIATES (CN)

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