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Title:
BISMUTH TUNGSTATE/BISMUTH SULFIDE/MOLYBDENUM DISULFIDE TERNARY HETEROJUNCTION COMPOSITE MATERIAL, PREPARATION METHOD THEREFOR, AND APPLICATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2021/169196
Kind Code:
A1
Abstract:
The present invention relates to a bismuth tungstate/bismuth sulfide/molybdenum disulfide ternary heterojunction composite material, a preparation method therefor, and application thereof. The material is composed of an ordered structure of bismuth tungstate/bismuth sulfide/molybdenum disulfide, Bi2WO6 being an orthorhombic crystal system, Bi2S3 being a P-type semiconductor located on the crystal face (130), and MoS2 being a layered transition metal sulfide located on the crystal face (002). The composite material has a spherical structure as a whole, and has an unsmooth surface, a layer of nanosheets uniformly grown on the outer layer thereof, and an average particle size of 2.4-2.6 μm. The spherical Bi2WO6/Bi2S3/MoS2 ternary heterojunction composite material prepared by the present invention has good adsorption and catalytic reduction ability for Cr(VI) under visible light.

Inventors:
ZHOU GUOWEI (CN)
REN JING (CN)
GONG QINGHUA (CN)
SUN BIN (CN)
GAO TINGTING (CN)
SUN XUEFENG (CN)
Application Number:
PCT/CN2020/109620
Publication Date:
September 02, 2021
Filing Date:
August 17, 2020
Export Citation:
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Assignee:
UNIV QILU TECHNOLOGY (CN)
International Classes:
B01J35/02; B01J27/051; B01J35/08; C02F1/30; C02F1/70; C02F101/22
Foreign References:
CN111203239A2020-05-29
CN109772369A2019-05-21
CN107308957A2017-11-03
CN104148093A2014-11-19
CN107537469A2018-01-05
CN107486199A2017-12-19
CN108295871A2018-07-20
US20120189681A12012-07-26
Other References:
ADHIKARI SANGEETA, KIM DO-HEYOUNG: "Synthesis of Bi2S3/Bi2WO6 hierarchical microstructures for enhanced visible light driven photocatalytic degradation and photoelectrochemical sensing of ofloxacin", CHEMICAL ENGENEERING JOURNAL, ELSEVIER, AMSTERDAM, NL, vol. 354, 1 December 2018 (2018-12-01), AMSTERDAM, NL, pages 692 - 705, XP055841716, ISSN: 1385-8947, DOI: 10.1016/j.cej.2018.08.087
Attorney, Agent or Firm:
JINAN SHENGDA INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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