Title:
BONDED THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
Document Type and Number:
WIPO Patent Application WO/2021/087753
Kind Code:
A1
Abstract:
Embodiments of bonded 3D memory devices and fabrication methods thereof are disclosed. In an example, a 3D memory device includes a first semiconductor structure, which includes a plurality of first NAND memory strings, a plurality of first BLs, at least one of the first BLs being conductively connected to a respective one of the first NAND memory strings; and a first bonding layer having a plurality of first bit line bonding contacts conductively connected to the plurality of first BLs, respectively. The 3D memory device further includes a second semiconductor structure, which includes a plurality of second NAND memory strings, a plurality of second BLs, at least one of the second BLs being conductively connected to a respective one of the second NAND memory strings, and a second bonding layer having a plurality of second bit line bonding contacts conductively connected to the plurality of second BLs, respectively.
Inventors:
HUANG SHIQI (CN)
LIU WEI (CN)
CHELON BATER (CN)
HU SIPING (CN)
LIU WEI (CN)
CHELON BATER (CN)
HU SIPING (CN)
Application Number:
PCT/CN2019/115750
Publication Date:
May 14, 2021
Filing Date:
November 05, 2019
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L23/488; H01L27/11524; H01L27/11548; H01L27/11551; H01L27/1157; H01L27/11575; H01L27/11578
Foreign References:
| CN109417075A | 2019-03-01 | |||
| CN109155320A | 2019-01-04 | |||
| CN109768050A | 2019-05-17 | |||
| US20190051662A1 | 2019-02-14 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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