Title:
BONDING METHOD, BONDED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMBER
Document Type and Number:
WIPO Patent Application WO/2022/092291
Kind Code:
A1
Abstract:
The present invention provides: a bonding method by which a plurality of metal members are bonded to a semiconductor member by utilizing sound energy; and the like. According to the present invention, a bonding apparatus 6 produces a bonded semiconductor device by respectively bonding a first metal member 1 and a second metal member 5 to a first surface and a second surface of a semiconductor member 3 by utilizing sound energy. For example, an SiC chip or an Si chip is used as the semiconductor member 3, and an Ni-plated copper plate is bonded thereto by means of an aluminum sheet by utilizing sound energy; and consequently, electrical conduction is established, for example, between the aluminum sheets that are used for the bonding of the first surface and the second surface in the bonded semiconductor device.
Inventors:
SATO SHIGERU (JP)
Application Number:
PCT/JP2021/040126
Publication Date:
May 05, 2022
Filing Date:
October 29, 2021
Export Citation:
Assignee:
SATO SHIGERU (JP)
International Classes:
B23K20/10; H01L21/52; H01L25/065; H01L25/07; H01L25/18
Domestic Patent References:
| WO2020071138A1 | 2020-04-09 |
Foreign References:
| JP2016203251A | 2016-12-08 | |||
| JP2019033226A | 2019-02-28 |
Attorney, Agent or Firm:
HADATE Shoji (JP)
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