Title:
BONDING WIRE FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO2006073206
Kind Code:
A9
Abstract:
A bonding wire for semiconductor device that attains improvement to ball part formability and junction easiness, excelling in loop controllability, and that enhances bonding strength at wedge junction, ensuring industrial production applicability, and that is composed mainly of copper cheaper than gold wire. There is provided a bonding wire for semiconductor device, comprising a core material composed mainly of copper and, superimposed thereon, a skin layer of conductive metal whose composition is different from that of the core material, characterized in that the skin layer is composed mainly of at least two members selected from among gold, palladium, platinum, rhodium, silver and nickel, and that in the skin layer, there is a region with a gradient of concentration of one or both of major component metal and copper in the direction of wire diameter.
Inventors:
UNO TOMOHIRO (JP)
YAMAMOTO YUKIHIRO (JP)
YAMAMOTO YUKIHIRO (JP)
Application Number:
PCT/JP2006/300312
Publication Date:
July 26, 2007
Filing Date:
January 05, 2006
Export Citation:
Assignee:
NIPPON STEEL MATERIALS CO LTD (JP)
UNO TOMOHIRO (JP)
YAMAMOTO YUKIHIRO (JP)
UNO TOMOHIRO (JP)
YAMAMOTO YUKIHIRO (JP)
International Classes:
H01L21/60
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