Title:
BROADBAND AMPLIFIER
Document Type and Number:
WIPO Patent Application WO/2014/087886
Kind Code:
A1
Abstract:
In the present invention, each via hole (5e, 5f) for connecting one end of a parallel capacitor (5c, 5d) of an impedance matching circuit (5) connected to two transistors (1) to a ground is used in a shared manner. Consequently, whereas an LPF impedance matching circuit (3) of a conventional circuit would have required a number of via holes equal to the number of stages of the LPF impedance matching circuit (3) multiplied by the number of transistor (1) cells, the number of via holes of the LPF-type impedance matching circuit (5) in the circuit according to the present invention can be reduced to half, allowing for smaller circuit size.
Inventors:
KUWATA EIGO (JP)
YAMANAKA KOJI (JP)
OTSUKA HIROSHI (JP)
KIRIKOSHI TASUKU (JP)
KAMO YOSHITAKA (JP)
YAMANAKA KOJI (JP)
OTSUKA HIROSHI (JP)
KIRIKOSHI TASUKU (JP)
KAMO YOSHITAKA (JP)
Application Number:
PCT/JP2013/081794
Publication Date:
June 12, 2014
Filing Date:
November 26, 2013
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H03F1/42; H03F3/195; H03F3/60; H03F3/68; H04B1/04
Foreign References:
| JP2008244763A | 2008-10-09 | |||
| JP2001244710A | 2001-09-07 | |||
| JP2001320170A | 2001-11-16 | |||
| JP2001156242A | 2001-06-08 |
Other References:
G. MOUGINOT ET AL.: "Three Stage 6-18 GHz High Gain and High Power Amplifier based on GaN Technology", 2010 IEEE MTT SYMPOSIUM, May 2010 (2010-05-01), pages 1392 - 1395, XP031712513
Attorney, Agent or Firm:
TAZAWA, Hideaki et al. (JP)
Hideaki Tazawa (JP)
Hideaki Tazawa (JP)
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