BULK WAVE RESONATOR AND BANDPASS FILTER

WIPO Patent Application WO/2021/193345

A1

[Problem] To provide a bulk wave resonator having a pass band of high frequencies. [Solution] This bulk wave resonator using bulk waves comprises: a supporting substrate; an acoustic multilayered film in which a plurality of types of dielectrics having different acoustic impedances are laminated on the supporting substrate; a piezoelectric layer formed on the acoustic multilayered film; and first and second electrodes between which a voltage for causing the bulk waves to occur in the piezoelectric layer is to be applied and which are opposed to and spaced from each other on a first surface that is an opposite surface of the piezoelectric layer to the acoustic multilayered film. When a direction in which the first electrode and the second electrode are opposed to each other among the directions parallel to the aforementioned surface of the piezoelectric layer is defined as first direction, the application of the voltage between the first electrode and the second electrode causes thickness shear vibrations by parallel electric field excitations in the first direction to occur inside the piezoelectric layer, and the bulk waves in the first direction by the thickness shear vibrations are used as main mode.

HASEGAWA HIROSHI (JP)
IWATA MASASHI (JP)
OZAKI TAKUMI (JP)
NAKAMURA KIYOSHI (JP)

PCT/JP2021/011051

September 30, 2021

March 18, 2021

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DEXERIALS CORP (JP)

H03H9/17; H03H9/25; H03H9/54; H03H9/64

WO2010007805A1

2010-01-21

JP2013528996A	2013-07-11
JP2010161671A	2010-07-22
JP2013123184A	2013-06-20
JPH09199980A	1997-07-31
JP2010136317A	2010-06-17
JP2007028594A	2007-02-01

AOMI PATENT (JP)

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