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Patent Searching and Data


Title:
CACHE DEVICE AND MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2022/016313
Kind Code:
A1
Abstract:
A cache device and a manufacturing method therefor, applied to the technical field of caches. The cache device comprises a first field-effect transistor (10), a magnetic tunnel junction, an electrode (17), and a second field-effect transistor (18) which are connected in sequence. The first field-effect transistor (10) is configured to provide a write current and control on/off of the write current by means of the gate. The magnetic tunnel junction comprises a non-ferromagnetic layer (11), a first ferromagnetic layer (12), a tunneling layer (13), a second ferromagnetic layer (14), and a pinning layer (16) which are arranged in sequence; the non-ferromagnetic layer (11) is configured to provide a lateral channel for inputting of the write current; the first ferromagnetic layer (12) is configured to generate a variable first magnetization direction on the basis of a class field spin torque; the tunneling layer (13) is configured to be located in the first ferromagnetic layer (12) and the second ferromagnetic layer (14); the second ferromagnetic layer (14) is configured to have a fixed second magnetization direction; the pinning layer (16) is configured to maintain the second magnetization direction. The electrode (17) is configured to connect the cache device and the second field-effect transistor (18). The second field-effect transistor (18) is configured to control on/off of the second field-effect transistor (18) by means of the gate to read an impedance state.

Inventors:
BI CHONG (CN)
LIU MING (CN)
Application Number:
PCT/CN2020/102990
Publication Date:
January 27, 2022
Filing Date:
July 20, 2020
Export Citation:
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Assignee:
INST OF MICROELECTRONICS CAS (CN)
International Classes:
G11C11/16
Foreign References:
CN104393169A2015-03-04
US20040233746A12004-11-25
CN1435841A2003-08-13
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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