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Title:
CAPACITOR FABRICATION METHOD, CAPACITOR FABRICATING DEVICE, CAPACITOR FABRICATING PROGRAM, AND RECORDING MEDIUM
Document Type and Number:
WIPO Patent Application WO/2010/098026
Kind Code:
A1
Abstract:
In a capacitor fabrication method, a capacitor is formed by forming a lower electrode film, a thin film dielectric, and an upper electrode film on a substrate, and then defects, including particles and electrical short circuits between the lower electrode and upper electrode, are detected before separating the capacitor into capacitor cells. Next, defects, including particles and electrical short circuits between the lower electrode and upper electrode, are removed before separating the capacitor into capacitor cells.

Inventors:
SHIBUYA AKINOBU (JP)
TAKEMURA KOICHI (JP)
MANAKO TAKASHI (JP)
Application Number:
PCT/JP2010/000853
Publication Date:
September 02, 2010
Filing Date:
February 12, 2010
Export Citation:
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Assignee:
NEC CORP (JP)
SHIBUYA AKINOBU (JP)
TAKEMURA KOICHI (JP)
MANAKO TAKASHI (JP)
International Classes:
H01L21/822; H01G13/00; H01L21/66; H01L27/04
Foreign References:
JP2007281376A2007-10-25
JP2007206444A2007-08-16
JP2008164881A2008-07-17
JPH10200071A1998-07-31
JP2003060041A2003-02-28
JPH11154734A1999-06-08
JP2005033195A2005-02-03
JP2001033886A2001-02-09
JP2002008942A2002-01-11
JP2006253631A2006-09-21
JP2005123250A2005-05-12
JP3465464B22003-11-10
JP2003069185A2003-03-07
JP2008041757A2008-02-21
JP2009042210A2009-02-26
Attorney, Agent or Firm:
TANAI, Sumio et al. (JP)
Sumio Tanai (JP)
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