Title:
CAPACITOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/022416
Kind Code:
A1
Abstract:
The embodiments of the present application provide a capacitor and a manufacturing method therefor. The capacitor comprises: a semiconductor substrate; and a lamination structure, comprising n conductive layers and m dielectric layers, at least one i-th isolation groove being provided in an i-th conductive layer, an (i+1)-th conductive layer being provided above the i-th conductive layer and in the at least one i-th isolation groove, the isolation grooves in odd-numbered conductive layers having a first overlapping region in a vertical direction, the isolation grooves in even-numbered conductive layers having a second overlapping region in a vertical direction, the first overlapping region and the second overlapping region not overlapping, m, n and i being positive integers, n ≥ 2, 1 ≤ i ≤ n-1; at least one first external electrode is electrically connected to all the odd-numbered conductive layers by means of a first conductive via structure provided in the second overlapping region; and at least one second external electrode is electrically connected to all the even-numbered conductive layers by means of a second conductive through-hole structure provided in the first overlapping region.
Inventors:
LU BIN (CN)
SHEN JIAN (CN)
SHEN JIAN (CN)
Application Number:
PCT/CN2019/099100
Publication Date:
February 11, 2021
Filing Date:
August 02, 2019
Export Citation:
Assignee:
SHENZHEN GOODIX TECH CO LTD (CN)
International Classes:
H01L29/94; H01L23/64
Foreign References:
| CN106170858A | 2016-11-30 | |||
| CN102969313A | 2013-03-13 | |||
| CN102456750A | 2012-05-16 | |||
| US20120080772A1 | 2012-04-05 |
Other References:
See also references of EP 3800663A4
Attorney, Agent or Firm:
LONGSUN LEAD IP LTD. (CN)
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