Title:
CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/093416
Kind Code:
A1
Abstract:
The present invention relates to a capacitor structure and a semiconductor device. The capacitor structure comprises: a lower plate, a main dielectric layer that covers the lower plate, a silicon oxynitride layer located on the main dielectric layer, and an upper plate located on the silicon oxynitride layer. In the present invention, the silicon oxynitride layer is provided between the main dielectric layer and the upper plate, which can reduce the influence of a high-voltage region on a low-voltage region while ensuring the withstand voltage of the device, thereby prolonging the overall service life of the device.
Inventors:
HE NAILONG (CN)
ZHAO JINGCHUAN (CN)
ZHANG SEN (CN)
ZHU FENG (CN)
ZHANG LONG (CN)
LIU SIYANG (CN)
SUN WEIFENG (CN)
ZHAO JINGCHUAN (CN)
ZHANG SEN (CN)
ZHU FENG (CN)
ZHANG LONG (CN)
LIU SIYANG (CN)
SUN WEIFENG (CN)
Application Number:
PCT/CN2023/111568
Publication Date:
May 10, 2024
Filing Date:
August 07, 2023
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L23/64
Foreign References:
| CN113823615A | 2021-12-21 | |||
| CN101533767A | 2009-09-16 | |||
| KR20040011247A | 2004-02-05 | |||
| CN111199956A | 2020-05-26 |
Attorney, Agent or Firm:
J.Z.M.C. PATENT AND TRADEMARK LAW OFFICE (GENERAL PARTNERSHIP) (CN)
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