1. A capacitor structure (1100), comprising: a substrate (102); a first conductive layer (104) above the substrate (102); and a porous layer made of anodic aluminum oxide (AAO), above the first conductive layer (104), having pores that extend perpendicularly from a top surface of the porous layer toward the first conductive layer (104), characterized in that the porous layer comprises a first region (110) in which pores conductive wires are disposed, the bottom ends of said conductive wires contacting said first conductive layer (104) at the bottom of the pores of the first region (110) and the top ends of said conductive wires contacting a second conductive layer (126) on the top surface of the porous layer in said first region (110), whereby said conductive wires constitute a conductive via through the porous layer, said conductive via interconnecting the first and second conductive layers (124,126), and the porous layer comprises a second region (120) in which pores a metal-insulator-metal (MIM) structure is disposed.

2. The capacitor structure (1100) of claim 1, wherein the porous layer comprises a third region (130) which pores are empty, the third region (130) separating the first region (110) and the second region (120).

3. The capacitor structure (1100) of claim 1, wherein the third region (130) is immediately adjacent to the first region (110) and immediately adjacent to the second region (120).

4. The capacitor structure (1100) of any of claims 1-3, wherein the MIM structure disposed in the pores of the second region (120) comprises a first metal layer, disposed conformally into the second region (120), an insulator layer disposed conformally over the first metal layer, and a second metal layer disposed

AMENDED SHEET (ARTICLE 19) conformally over the insulator layer, and wherein the first metal layer contacts the conductive layer (104) at the bottom of each pore of the second region (120).

5. The capacitor structure (1100) of any of claims 1-4, wherein the first conductive layer (104) comprises a first layer and a second layer, the second layer disposed between the first layer and the porous layer.

6. The capacitor structure (1100) of claim 5, wherein the first layer is made of aluminum and the second layer is made of tungsten.

7. The capacitor structure (100) of claim 5, wherein the second layer is discontinuous and open under the first region (110) and/or the second region (120) of the porous layer.

8. The capacitor structure (100) of any of claims 1-7, comprising: a metal layer (106a), above the conductive layer (104), surrounding the porous layer from the sides.

9. The capacitor structure (100) of any of claims 1-8, comprising: an additional conductive layer (122) in contact with the MIM structure; wherein the second conductive layer (126) is isolated from the first conductive layer (122).

10. A method of fabricating a capacitor structure, comprising: forming a porous layer (108) made of anodic aluminum oxide (AAO) above a first conductive layer (104), the porous layer (108) having pores that extend perpendicularly from a top surface of the porous layer (108) toward the conductive layer (104); forming conductive wires in the pores of a first region (110) of the porous layer, the bottom ends of the conductive wires contacting the first conductive layer

AMENDED SHEET (ARTICLE 19) (104) at the bottoms of the pores of the first region (110), said conductive wires extending to the top of the porous layer; forming a second conductive layer (126) on the top surface of the porous layer in said first region (110), the top ends of the conductive wires contacting the second conductive layer (126) whereby said conductive wires constitute a conductive via through the porous layer, said conductive via interconnecting the first and second conductive layers (124,126); and forming a metal-insulator-metal (MIM) structure in the pores of a second region (120) of the porous layer;

11. The method of claim 10, wherein forming the conductive wires in the pores of the first region (110) comprises: depositing a first hard mask (132) over the porous layer (108), the first hard mask (132) being open over the first region (110); growing the conductive wires in the pores of the first region (110) by electro-chemical deposition (ECD).

12. The method of claim 11, wherein forming the MIM structure in the pores of the second region (120) comprises: removing the first hard mask (132); depositing a second hard mask (112) covering the first region (110) and an adjacent third region (130) of the porous layer (108); and depositing the MIM structure into the porous layer (108) and over the second hard mask (112).

13. The method of claim 12, comprising: forming an additional first conductive layer (122) over the MIM structure; etching the MIM structure and the second hard mask (112) over a section of the first region (110) to expose the first region (110) in said section; forming an insulation layer (124) over the additional conductive layer (122), the insulator layer (124) fully covering the additional conductive layer (122); and

AMENDED SHEET (ARTICLE 19) 22 forming a second conductive layer (126) over the exposed section of the first region (110) and at least a portion of the insulation layer (124), the second conductive layer (126) in contact with the top ends of said at least some of the conductive wires.

AMENDED SHEET (ARTICLE 19)