CARBOXYLIC ACID ZINC SALT USED IN MANUFACTURING SEMICONDUCTOR NANOPARTICLES

WIPO Patent Application WO/2023/022016

A1

The present invention is a carboxylic acid zinc salt used in manufacturing semiconductor nanoparticles, the carboxylic acid zinc salt being characterized by: being a zinc salt of a carboxylic acid; the proportion of C8-10 carboxylic acid in the total carboxylic acid forming the zinc salt of a carboxylic acid being 80.0 wt.% or greater; and the average branching degree of the total carboxylic acid forming the zinc salt of a carboxylic acid being 1.1 to 2.9. The present invention is capable of providing a zinc salt that is used for manufacturing semiconductor nanoparticles having a core/shell structure having outstanding optical properties and is convenient when manufacturing semiconductor nanoparticles having a core/shell structure by using two or more types of shell precursors.

YOSHIMURA TAKESHI (JP)
NAKAMURA MAKO (JP)
MITSUKA YUKO (JP)
SASAKI HIROKAZU (JP)
MORIYAMA TAKAFUMI (JP)
KIDO MAKOTO (JP)

PCT/JP2022/030043

February 23, 2023

August 05, 2022

Click for automatic bibliography generation  

NOF CORP (JP)

C07C53/126; B82Y40/00; C07F3/06; C09K11/08

US3513122A	1970-05-19
JP2004025711A	2004-01-29
JP2020521707A	2020-07-27
JP2012033936A	2012-02-16
JP2008071585A	2008-03-27

XIONG, G. ; JONES, G.A.C. ; RUNGSAWANG, R. ; ANDERSON, D.: "Non-aqueous solution processed ZnO thin film transistors", THIN SOLID FILMS, ELSEVIER, AMSTERDAM, NL, vol. 518, no. 14, 3 May 2010 (2010-05-03), AMSTERDAM, NL , pages 4019 - 4023, XP026996862, ISSN: 0040-6090

ASHITABA INTERNATIONAL PATENT OFFICE (JP)

View/Download PDF      PDF Help

Previous Patent: STRETCHING MULTIFILAMENT AND METHOD FOR MANUFACTURING SAME, MULTIFILAMENT AND METHOD FOR MANUFACTURI...

Next Patent: ANTENNA DEVICE