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Title:
A CATHODE PEDESTAL FOR A PLASMA ETCH REACTOR
Document Type and Number:
WIPO Patent Application WO2003103004
Kind Code:
A3
Abstract:
Various embodiments of the present invention are generally directed to a plasma etch reactor. In one embodiment, the reactor includes a chamber, a pedestal (105) disposed within the chamber, a gas distribution plate disposed within the chamber overlying the pedestal, a ring (115) surrounding the pedestal, and an upper electrically conductive mesh layer (215) and a lower electrically conductive mesh layer (220) disposed within the pedestal. The ring has a raised portion (118). The upper electrically conductive mesh layer is disposed substantially above the lower electrically conductive mesh layer and is substantially the same size as a substrate (110) configured to be disposed on the pedestal. The lower electrically conductive mesh layer is substantially annular in shape and is disposed around the periphery of the upper electrically conductive mesh layer and below the raised portion of the ring.

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Inventors:
YANG JANG GYOO
LUE BRIAN C
BUCHBERGER DOUGLAS A JR
TAVASSOLI HAMID
CHAE HEEYEOP
HOFFMAN DANIEL J
ISHIKAWA TETSUYA
KATS SEMYON L
CHIANG KANG-LIE
Application Number:
PCT/US2003/017477
Publication Date:
May 13, 2004
Filing Date:
June 03, 2003
Export Citation:
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Assignee:
APPLIED MATERIALS INC (US)
International Classes:
H05H1/46; H01J37/32; H01L21/00; H01L21/306; H01L21/3065; H01L21/687; (IPC1-7): H01J37/32; H01L21/68
Domestic Patent References:
WO2002007212A12002-01-24
WO2002009162A22002-01-31
WO2000075970A12000-12-14
WO2001071765A22001-09-27
WO1999025006A21999-05-20
WO1999041778A11999-08-19
WO2000070657A12000-11-23
Foreign References:
US5748434A1998-05-05
US6232236B12001-05-15
US5720818A1998-02-24
EP0601788A21994-06-15
EP0819780A21998-01-21
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