Title:
A CATHODIC DEVICE
Document Type and Number:
WIPO Patent Application WO2006061686
Kind Code:
A3
Abstract:
A method of forming a cathodic device includes the steps of forming a p-type layer (18) and an n-type layer (20) below a surface (20) of a substrate. The material has a conduction band which is at an energy level no more than 0.5 electron-Volts (eV) below the lowest vacuum energy level. The layers are formed so that they are in contact, with the p-type layer located between the surface and the n-type layer, and so that they form a p-n junction. The thickness of the p-type layer is somewhat less than the average distance which an electron injected into the p-type layer travels by diffusion and the thickness of the negatively charged depletion layer in the p-type layer is such that the difference between the thickness of the p-type layer and the thickness of the negatively charged depletion layer in the p-type layer is substantially less than the said average distance.
Inventors:
PRINS JOHAN FRANS (ZA)
Application Number:
PCT/IB2005/003668
Publication Date:
July 27, 2006
Filing Date:
December 05, 2005
Export Citation:
Assignee:
PRINS JOHAN FRANS (ZA)
International Classes:
H01J1/308; H01J1/312; H01J9/02
Domestic Patent References:
| WO2003019597A1 | 2003-03-06 |
Foreign References:
| EP1302961A2 | 2003-04-16 | |||
| US6538368B1 | 2003-03-25 | |||
| US20040095868A1 | 2004-05-20 | |||
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| US5952772A | 1999-09-14 | |||
| US5334853A | 1994-08-02 | |||
| US20010011972A1 | 2001-08-09 | |||
| US5838019A | 1998-11-17 | |||
| GB1147883A | 1969-04-10 | |||
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