Title:
CDTE EPITAXIAL GROWTH METHOD
Document Type and Number:
WIPO Patent Application WO/2017/200035
Kind Code:
A1
Abstract:
The primary objective of the present invention is to provide a novel method for epitaxially growing CdTe on a single-crystal Si substrate. Another objective of the present invention is to provide a novel method for epitaxially growing CdTe on a single-crystal CdTe substrate. In order to achieve the abovementioned objectives, a method is provided for epitaxially growing CdTe on a single-crystal Si substrate or a single-crystal CdTe substrate, wherein the method has a growth step for depositing CdTe from a gas phase onto the surface of the single-crystal Si substrate or the single-crystal CdTe substrate using simple Cd and simple Te or an organic Te compound as the respective Cd source and Te source.
Inventors:
ISO KENJI (JP)
KOUKITU AKINORI (JP)
MURAKAMI HISASHI (JP)
KOUKITU AKINORI (JP)
MURAKAMI HISASHI (JP)
Application Number:
PCT/JP2017/018627
Publication Date:
November 23, 2017
Filing Date:
May 18, 2017
Export Citation:
Assignee:
MITSUBISHI CHEM CORP (JP)
NATIONAL UNIV CORPORATION TOKYO UNIV OF AGRICULTURE AND TECHNOLOGY (JP)
NATIONAL UNIV CORPORATION TOKYO UNIV OF AGRICULTURE AND TECHNOLOGY (JP)
International Classes:
H01L21/365; C23C14/06
Foreign References:
| JP2008072136A | 2008-03-27 |
Other References:
A. MILLION: "Heteroepitaxy of CdTe on {211} Si substrates by molecular beam epitaxy", JOURNAL OF CRYSTAL GROWTH, vol. 159, 1996, pages 76 - 80, XP004021359
SH.U. YULDASHEV: "Effects of hydrogenation and annealing on the shallow donor-band recombination in In-doped CdTe epitaxial layers grown on p-CdTe(211) substrates", JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, vol. 61, 2000, pages 711 - 718, XP027248028
ISHWARA B. BHAT: "On the Mechanism of Growth of CdTe by Organometallic Vapor-Phase Epitaxy", J. ELECTROCHEM. SOC, vol. 134, January 1987 (1987-01-01), pages 195 - 198, XP055440376
SH.U. YULDASHEV: "Effects of hydrogenation and annealing on the shallow donor-band recombination in In-doped CdTe epitaxial layers grown on p-CdTe(211) substrates", JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, vol. 61, 2000, pages 711 - 718, XP027248028
ISHWARA B. BHAT: "On the Mechanism of Growth of CdTe by Organometallic Vapor-Phase Epitaxy", J. ELECTROCHEM. SOC, vol. 134, January 1987 (1987-01-01), pages 195 - 198, XP055440376
Attorney, Agent or Firm:
KAWAGUCHI, Yoshiyuki et al. (JP)
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