Title:
CERIUM-DOPED PZT PIEZOELECTRIC FILM
Document Type and Number:
WIPO Patent Application WO/2015/146877
Kind Code:
A1
Abstract:
This cerium-doped PZT piezoelectric film comprises a cerium-doped complex metal oxide represented by the general formula PbzCexZryTi1
−
yO3, in which x, y, and z satisfy the respective relations 0.005 ≤ x ≤ 0.05, 0.40 ≤ y ≤ 0.55, and 0.95 ≤ z ≤ 1.15. Also, the hysteresis exhibited by the polarization amount of this cerium-doped PZT piezoelectric film is preferably shifted by at least 4 kV/cm from the center thereof towards the negative side.
Inventors:
DOI TOSHIHIRO (JP)
SAKURAI HIDEAKI (JP)
SOYAMA NOBUYUKI (JP)
SAKURAI HIDEAKI (JP)
SOYAMA NOBUYUKI (JP)
Application Number:
PCT/JP2015/058666
Publication Date:
October 01, 2015
Filing Date:
March 23, 2015
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
H01L41/187; C01G25/00; H01L41/318
Foreign References:
| JP2012169400A | 2012-09-06 |
Other References:
S.B.MAJUMDER ET AL.: "Effect of cerium doping on the micro-structure and electrical properties of sol-gel derived Pb1.05(Zr0.53-deltaCe6Ti0.47)O3 (delta?10 at.%) thin films", MATERIALS SCIENCE AND ENGINEERING B, vol. 98, no. Issue 1, 25 February 2003 (2003-02-25), pages 25 - 32, XP004412841
See also references of EP 3125315A4
See also references of EP 3125315A4
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
Masatake Shiga (JP)
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